ES3DBF 반도체 회로 부품 판매점
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
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 MDD |
ES3ABF THRU ES3JBF
SURFACE MOUNT SUPERFAST RECOVERY RECTIFIER
Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Amperes
0.146(3.70)
0.138(3.50)
0.051(1.30)
0.043(1.10)
0.051(1.30)
0.039(1.0)
SMBF
Cathode Band
Top View
0.086(2.20)
0.075(1.90)
0.173(4.4)
0.165(4.2)
0.010(0.26)
0.0071(0.18)
0.216(5.5)
0.200(5.1)
Dimensions in inches and (millimeters)
FEATURES
For surface mounted applications
Low profile package
Glass Passivated Chip Junction
Superfast reverse recovery time
Lead free in comply with EU RoHS 2011/65/EU diretives
MECHANICAL DATA
Case: JEDEC SMBF molded plastic body
Terminals: leads solderable per MIL-STD-750,
Method 2026
Mounting Position: Any
Weight:57mg/0.002oz
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
SYMBOLS
Marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=100 C
VRRM
VRMS
VDC
I(AV)
Peak forward surge current
8.3ms single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 3.0A
VF
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=125 C
IR
Maximum reverse recovery time (NOTE 1)
trr
Typical junction capacitance (NOTE 2)
CJ
Typical thermal resistance (NOTE 3)
RθJA
Operating junction and storage temperature range TJ,TSTG
ES3ABF
E3AB
50
35
50
ES3BBF
E3BB
100
70
100
1.0
ES3DBF
E3DB
200
140
200
ES3GBF
E3GB
400
280
400
3.0
100
1.25
5.0
100.0
35
45.0
55.0
-55 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas
ES3JBF
E3JB
600
420
600
1.7
UNITS
VOLTS
VOLTS
VOLTS
Amps
Amps
Volts
µA
ns
pF
C/W
C
RATINGS AND CHARACTERISTIC CURVES ES3ABF THRU ES3JBF
Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram
50 ohm
Noninductive
10 ohm
Noninductive
trr
+0.5
+
25Vdc
approx
-
1 ohm
NonInductive
D.U.T
PULSE
GENERATOR
Note 2
OSCILLOSCOPE
Note 1
0
-0.25
Note：1. Rise Time = 7ns, max.
Input Impedance = 1megohm,22pF.
2. Ries Time =10ns, max.
Source Impedance = 50 ohms.
Fig.2 Maximum Average Forward Current Rating
3.5
3.0
2.4
1.8
1.2
0.6
0.0
Single phase half wave resistive
or inductive P.C.B mounted on
0.5×0.5"(12.7×12.7mm) pad areas.
25 50 75 100 125
Lead Temperature (°C)
150
175
Fig.4 Typical Forward Characteristics
10
T J = 2 5°C
1.0
0.1
0.01
ES3ABF~ES3DBF
ES3EBF/WS3GBF
ES3JBF
0.001
0
0.5 1.0 1.5 2.0
Instaneous Forward Voltage (V)
2.5
-1.0
10ns/div
Set time Base for 10ns/div
Fig.3 Typical Reverse Characteristics
300
100
T J = 1 2 5°C
10
T J = 7 5°C
1.0
T J = 2 5°C
0.1
0
20 40 60
80
% of PIV.VOLTS
100
Fig.5 Typical Junction Capacitance
70
60
50
40
30
T J = 2 5°C
20 f = 1.0MHz
Vsig = 50mVp-p
10
0.1 1 10 100
Reverse Voltage (V)
Fig.6 Maximum Non-Repetitive Peak
Forward Surage Current
120
100
80
60
40
8.3 ms Single Half Sine Wave
20 (JEDEC Method)
00
1
10
Number of Cycles
100
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ES3DBF rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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