MURA115 반도체 회로 부품 판매점
SURFACE MOUNT ULTRAFAST POWER RECTIFIERS DIODES
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 SunMate |
MURA105 - MURA160
SURFACE MOUNT ULTRAFAST POWER RECTIFIERS DIODES
VOLTAGE RANGE: 50 - 600V
CURRENT: 1.0 A
Features
! Glass Passivated Die Construction
! Ideally Suited for Automatic Assembly
! Low Forward Voltage Drop, High Efficiency
! Low Power Loss
! Super-Fast Recovery Time
! Plastic Case Material has UL Flammability
C lassific a tion
R ating
94V -O
B
SMA(DO-214AC)
Mechanical Data
Dim Min Max
! Case: SMA/DO-214AC, Molded Plastic
! Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
! Polarity: Cathode Band or Cathode Notch
! Marking: Type Number
! Weight: 0.064 grams (approx.)
A
J
H
G
E
C A 2.29 2.92
B 4.00 4.60
C 1.27 1.63
D D 0.15 0.31
E 4.80 5.59
G 0.10 0.20
H 0.76 1.52
J 2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Symbol MURA105 MURA110 MURA115 MURA120 MURA130 MURA140 MURA160
Unit
Marking U4A
U4B
U4C
U4D U4E
U4G
U4J
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
VRRM
VRMS
VDC
I(AV)
IFSM
VF
IR
trr
CJ
RθJA
TJ,TSTG
50
35
50
100
150
200 300
400
600
V
70
105
140 210
280
420
V
100
150
200 300
400
600
V
1.0 A
30.0
0.95
5.0
50.0
35
15.0
60.0
-50 to +150
1.25
A
1.7 V
µA
ns
pF
C/W
C
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1 of 2
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RATINGS AND CHARACTERISTIC CURVES MURA105 THRU MURA160
FIG. 1- FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4 Single Phase
Half Wave 60Hz
Resistive or
inductive Load
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, C
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10 TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0
MURA105-MURA120
MURA130-MURA140
MURA160
0.4 0.8 1.2 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100 TJ=25 C
10
1
0.1
1.0
10 100
REVERSE VOLTAGE,VOLTS
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
10 8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
5.0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
TJ=100 C
1
0.1
TJ=25 C
0.01 0
20 40
60 80 100
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
0.1 1
10
t,PULSE DURATION,sec.
100
2 of 2
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( sunmate )
MURA115 rectifier
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[ MURA115.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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