MBRB1060CT 반도체 회로 부품 판매점
10A Surface Mount High Power Schottky Barrier Rectifiers
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 CITC |
MBRB1040CT THRU MBRB10200CT
10A Surface Mount High Power Schottky Barrier Rectifiers
■ Features
• Electrostatic discharge (ESD) test under IEC6100-4-2
standard >16ΚV(ΜΒRΒ1040CT~ΜΒRΒ1065CT).
standard >10ΚV(ΜΒRΒ10100CT~ΜΒRΒ10200CT).
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Suffix "G" indicates Halogen-free part, ex.MBRB1040CTG.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
■ Mechanical data
• Epoxy : UL94-V0 rated flame retardant.
• Case : Molded plastic, TO-263 / D2PAK
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Polarity: Indicated by cathode band.
• Mounting Position : Any.
• Weight : Approximated 1.70 gram.
■ Outline
D2PAK(TO-263)
0.402(10.20)
0.046(1.20) 0.386(9.80)
0.032(0.80)
2
0.370(9.40) Marking code
0.354(9.00)
13
0.192(4.8)
0.176(4.4)
0.063(1.60)
0.055(1.40)
0.205(5.20)
0.189(4.80)
0.185(4.70)
0.169(4.30)
0.055(1.40)
0.047(1.20)
0.012(0.30)
0.004(0.10)
0.108(2.70)
0.092(2.30)
0.024(0.60)
0.016(0.40)
PIN 1
PIN 3
PIN 2
Dimensions in inches and (millimeters)
■ Maximum ratings and electrical characteristics
Rating at 25OC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Parameter
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Thermal resistance
Storage temperature
Conditions
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC method)
VR = VRRM TA = 25OC
VR = VRRM TA = 125OC
f=1MHz and applied 4V DC reverse voltage
Junction to ambient
Symbol
IO
IFSM
IR
CJ
RθJA
TSTG
MIN.
-55
TYP.
150
30
MAX.
10
125
0.1
10
+175
UNIT
A
A
mA
pF
OC/W
OC
Symbol
Marking code
Max.
repetitive peak
reverse voltage
VRRM (V)
MBRB1040CT MBRB1040CT
40
MBRB1045CT MBRB1045CT
45
MBRB1060CT MBRB1060CT
60
MBRB1065CT MBRB1065CT
65
MBRB10100CT MBRB10100CT
100
MBRB10150CT MBRB10150CT
150
MBRB10200CT MBRB10200CT
200
Max.
RMS voltage
VRMS (V)
28
31.5
42
45.5
70
105
140
Max. DC
blocking voltage
VR (V)
40
45
60
65
100
150
200
Max.
forward voltage
@5A, TA = 25OC
VF (V)
0.70
0.79
0.81
0.87
0.90
Max.
forward voltage
@5A, TA = 125OC
VF (V)
Operating
temperature
TJ (OC)
0.57
0.70
-50 ~ +150
0.71
0.77
0.80
-50 ~ +175
Document ID : DS-12K63
1 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C
MBRB1040CT THRU MBRB10200CT
10A Surface Mount High Power Schottky Barrier Rectifiers
■ Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
12
RESISTIVE OR INDUCTIVE LOAD
10
8.0
MBRB1040CT~MBRB10100CT
6.0
4.0 MBRB10150CT~MBRB10200CT
2.0 single phase half wave 60Hz
resistive or inductive load
0 25 50 75 100 125 150 175
Lead Temperature ( OC)
Fig. 3.1 - Typical Instantaneous Forward
Characteristics
50
MBRB1040CT
10
TJ=125OC
1
MBRB1060CT
0.1
0.01
TJ=25OC
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
1.2
Fig. 3.3 - Typical Instantaneous Forward
Characteristics
100
MBRB10150CT
MBRB10200CT
10
TJ=125OC
TJ=25OC
1
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
1.2
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
150
125
100
75
50
25
0
1
10
Number of Cycles at 60 Hz
100
Fig. 3.2 - Typical Instantaneous Forward
Characteristics
50
MBRB10100CT
10
TJ=125OC
1.0
0.5 TJ=25OC
0 0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
Fig. 4 - Typical Reverse Characteristics
100
10
TJ=150OC
1
TJ=125OC
0.1
0.01
TJ=75OC
0.001
0.0001
0
TJ=25OC
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage ( %)
Document ID : DS-12K63
2 Issued Date : 2010/05/05
Revised Date : 2012/05/31
Revision : C
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MBRB1060CT rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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