SB30H150CT-1 반도체 회로 부품 판매점
Dual Common Cathode High Voltage Schottky Rectifier
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 Vishay |
MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode High Voltage Schottky Rectifier
Low Leakage Current 5.0 μA
TO-220AB
ITO-220AB
123
MBR30H150CT
TO-262AA
123
MBRF30H150CT
123
SB30H150CT-1
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
2 x 15 A
150 V
260 A
VF 0.75 V
TJ
Package
175 °C
TO-220AB, ITO-220AB,
TO-262AA
Diode variations
Dual Common Cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, and
polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL MBR30H150CT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
VRRM
VRWM
VDC
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
Peak repetitive reverse current per diode at tp = 2 μs, 1 kHz
Peak non-repetitive reverse surge energy per diode
(8/20 μs waveform)
IRRM
ERSM
Non-repetitve avalanche energy per diode at 25 °C,
IAS = 2 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to
heatsink t = 1 min
EAS
dV/dt
TJ, TSTG
VAC
MBRF30H150CT
150
150
150
30
15
260
1.0
10
20
10 000
- 65 to + 175
1500
SB30H150CT-1
UNIT
V
V
V
A
A
A
mJ
mJ
V/μs
°C
V
Revision: 13-Aug-13
1 Document Number: 88865
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR30H150CT, MBRF30H150CT, SB30H150CT-1
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum instantaneous forward voltage
per diode
Maximum reverse current per diode at
working peak reverse voltage
VF (1)
IR (1)
IF = 15 A
IF = 15 A
IF = 30 A
IF = 30 A
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TJ = 25 °C
TJ = 125 °C
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
Typical thermal resistance per diode
RJC
1.7
4.0
VALUE
0.90
0.75
0.99
0.86
5.0
1.0
MBRB
1.7
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB MBR30H150CT-E3/45
2.06
ITO-220AB MBRF30H150CT-E3/45
2.20
TO-262AA SB30H150CT-1E3/45
1.58
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
PACKAGE CODE
45
45
45
BASE QUANTITY
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
40
35
MBR, MBRB
30
MBRF
25
20
15
10
5
0
25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve (Total)
280
TJ = TJ Max.
240 8.3 ms Single Half Sine-Wave
200
160
120
80
40
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
Revision: 13-Aug-13
2 Document Number: 88865
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SB30H150CT-1 rectifier
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