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IXYS Corporation |
Standard Rectifier Module
3~ Rectifier Bridge
Part number
VUO35-16NO7
- ~~~ +
VUO35-16NO7
3~
Rectifier
VRRM =
I DAV =
I FSM =
1600 V
35 A
400 A
Features / Advantages:
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
Applications:
● Diode for main rectification
● For three phase bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
Package: PWS-A
● Industry standard outline
● RoHS compliant
● Easy to mount with two screws
● Base plate: Aluminium
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
Rectifier
Symbol
VRSM
VRRM
IR
VF
I DAV
Definition
Conditions
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
reverse current
VR = 1600 V
VR = 1600 V
forward voltage drop
IF = 15 A
IF = 45 A
IF = 15 A
IF = 45 A
bridge output current
TC = 85°C
rectangular
d=⅓
VF0
rF
R thJC
R thCH
Ptot
I FSM
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
I²t value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
CJ junction capacitance
VR = 400 V; f = 1 MHz
VUO35-16NO7
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
TVJ = 125 °C
TVJ = 150°C
Ratings
min. typ. max.
1700
1600
40
1.5
1.10
1.38
1.01
1.38
35
Unit
V
V
µA
mA
V
V
V
V
A
TVJ = 150°C
TC = 25°C
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 45°C
VR = 0 V
TVJ = 150°C
VR = 0 V
TVJ = 25°C
0.80 V
12.9 mΩ
4.2 K/W
0.6 K/W
29 W
400 A
430 A
340 A
365 A
800 A²s
770 A²s
580 A²s
555 A²s
10 pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130605a
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