NRVTS12100MFS 반도체 회로 부품 판매점
Very Low Forward Voltage Trench-based Schottky Rectifier
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 ON Semiconductor |
NTS12100MFS,
NRVTS12100MFS
Very Low Forward Voltage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
http://onsemi.com
TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
100 VOLTS
1,2,3
5,6
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
MARKING
DIAGRAM
A
A TH1210
A AYWWZZ
Not Used
C
C
TH1210
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package Shipping†
NTS12100MFST1G
SO−8 FL
1500 /
NRVTS12100MFST1G (Pb−Free) Tape & Reel
NTS12100MFST3G
SO−8 FL
5000 /
NRVTS12100MFST3G (Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 − Rev. 2
1
Publication Order Number:
NTS12100MFS/D
NTS12100MFS, NRVTS12100MFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 137°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 134°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
12
24
200
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +150 °C
TJ
−55 to +150
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 5 A, TJ = 125°C)
(iF = 12 A, TJ = 25°C)
Symbol
RθJC
Typ
2.0
Max Unit
− °C/W
Symbol
vF
Typ
0.5
0.63
Max Unit
V
−
0.71
(iF = 5 A, TJ = 125°C)
(iF = 12 A, TJ = 25°C)
Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
0.44 −
0.56 0.64
iR
3.4 −
14.5 95 mA
(VR = 70 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
3.5 −
9.2 20 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
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NRVTS12100MFS rectifier
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상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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