NRVTS1545EMFST1G 반도체 회로 부품 판매점
Exceptionally Low Leakage Trench-based Schottky Rectifier
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 ON Semiconductor |
NTS1545EMFS,
NRVTS1545EMFS
Exceptionally Low Leakage
Trench-based Schottky
Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• Low Thermal Resistance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
Notebook Adapters
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics:
• Case: Epoxy, Molded
• Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
• Lead Finish: 100% Matte Sn (Tin)
• Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Device Meets MSL 1 Requirements
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
15 AMPERES
45 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
Not Used
TE1545
AYWWZZ
TE1545
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
NTS1545EMFST1G
Package Shipping†
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NTS1545EMFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVTS1545EMFST1G SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVTS1545EMFST3G SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 0
1
Publication Order Number:
NTS1545EMFS/D
NTS1545EMFS, NRVTS1545EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 165°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 164°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
45
15
30
210
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +175 °C
TJ
−55 to +175
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 5.0 Amps, TJ = 25°C)
(iF = 7.5 Amps, TJ = 25°C)
(iF = 15 Amps, TJ = 25°C)
Symbol
RθJC
Typ
1.3
Max Unit
− °C/W
vF
0.44
−
V
0.46 −
0.50 0.60
(iF = 5.0 Amps, TJ = 125°C)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
0.33 −
0.36 −
0.43 0.53
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
− 50 mA
15 20 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
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NRVTS1545EMFST1G rectifier
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전화번호 : 051-319-2877
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NRVTS1545EMFST1G
Exceptionally Low Leakage Trench-based Schottky Rectifier - ON Semiconductor
