SBL3040PT 반도체 회로 부품 판매점
Dual Common Cathode Schottky Rectifier
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 Vishay |
www.vishay.com
SBL3030PT, SBL3040PT
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
3
2
1
TO-247AD (TO-3P)
PIN 1
PIN 3
PIN 2
CASE
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
30 V, 40 V
IFSM
275 A
VF 0.55 V
TJ max.
Package
125 °C
TO-247AD (TO-3P)
Diode variations
Common cathode
FEATURES
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
VRRM
VRWM
VDC
IF(AV)
IFSM
Operating junction and storage temperature range
TJ, TSTG
SBL3030PT
SBL3040PT
30 40
21 28
30 40
30
275
- 40 to + 125
UNIT
V
V
V
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL TEST CONDITIONS SBL3030PT
SBL3040PT
Maximum instantaneous forward voltage
per diode
VF (1)
15 A
0.55
Maximum instantaneous reverse current at
rated DC blocking voltage per diode
IR (1)
TC = 25 °C
TC = 100 °C
1.0
75
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
UNIT
V
mA
mA
Revision: 12-Jun-13
1 Document Number: 88732
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
SBL3030PT, SBL3040PT
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL3030PT
Thermal resistance, junction to case per diode
RJC
1.5
SBL3040PT
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-247AD
SBL3030PT-E3/45
6.13
PACKAGE CODE
45
BASE QUANTITY
30/tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
DELIVERY MODE
Tube
30
Resistive or Inductive Load
24
18
12
6
0
0 50 100 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
100
TJ = 125 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1
TJ = 25 °C
0.1
0.01
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
300
250
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
100
TJ = 125 °C
10
1 TJ = 75 °C
0.1
TJ = 25 °C
0.01
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Revision: 12-Jun-13
2 Document Number: 88732
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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SBL3040PT rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
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