F16C20D 반도체 회로 부품 판매점
16.0 Ampere Heatsink Common Anode Fast Recovery Rectifier Diode
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 Thinki Semiconductor |
F16C20A thru F16C60A
®
F16C20A thru F16C60A
Pb Free Plating Product
Pb
16.0 Ampere Heatsink Common Anode Fast Recovery Rectifier Diode
Feature
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment(Inverters/Converters)
Plating Power Supply,Adaptor,SMPS and UPS
Car Audio Amplifiers and Sound Device System
Mechanical Data
Case:TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Suffix "C"
Case
Negative
Common Anode
Suffix "A"
Case
Doubler
Tandem Polarity
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage VRRM
F16C20C
F16C20A
F16C20D
200
F16C40C
F16C40A
F16C40D
400
Maximum RMS Voltage
VRMS
140
280
Maximum DC Blocking Voltage
VDC 200
400
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0
F16C60C
F16C60A
F16C60D
600
420
600
UNIT
V
V
V
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150 A
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
0.98
1.3
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
10.0
250
Maximum Reverse Recovery Time (Note 1) Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Typical Thermal Resistance (Note 3)
R JC
2.2
Operating Junction and Storage
Temperature Range
TJ, TSTG
-55 to + 150
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
1.7 V
uA
uA
nS
pF
oC/W
oC
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
F16C20A thru F16C60A
®
FIG.1 - FORWARD CURRENT DERATING CURVE
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
0
0 50
100
CASE TEMPERATURE, oC
150
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
80
F16C20A
F16C40A
8
0.1 F16C60A
0.01
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
200
175
150
125
100
75
50
25
0
1
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
10
NUMBER OF CYCLES AT 60Hz
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
1000
TJ=125oC
100
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
Rev.04/2014
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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( thinki )
F16C20D rectifier
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