MBR530NG 반도체 회로 부품 판매점
(MBR520NG - MBR5100NG) 5.0A Leaded Type Schottky Barrier Rectifiers
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 American First Semiconductor |
Schottky Barrier Rectifier
MBR520NG THRU MBR5100NG
5.0A Leaded Type Schottky Barrier
Rectifiers - 20V-200V
Features
• Axial lead type devices for through hole design.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• Suffix "-H" indicates Halogen free parts, ex. MBR520NG-H.
Pa,ckage outline
DO-201AD
.220(5.6)
.197(5.0)
DIA.
1.0(25.4)
MIN.
.375(9.5)
.285(7.2)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, DO-201AD
• Terminals : Solder plated, solderable per MIL-STD-202,
Method 208 guranteed
• Polarity :Color band denotes cathode end
• Mounting Position : Any
• Weight :Approximated 1.10 gram
.052(1.3)
.048(1.2)
DIA.
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 5.0 A
IFSM 150 A
0.5
IR
mA
50
RθJA
10 OC/W
CJ 380 pF
TSTG
-65
+175 OC
SYMBOLS
MBR520NG
MBR530NG
MBR540NG
MBR550NG
MBR560NG
MBR580NG
MBR5100NG
V
*
RRM
1
(V)
20
30
40
50
60
80
100
V
*
RMS
2
(V)
14
21
28
35
42
56
70
V
*
R
3
(V)
20
30
40
50
60
80
100
V
*
F
4
(V)
0.55
0.70
0.85
Operating
temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage @IF=5.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2
MBR520NG THRU MBR5100NG
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
6.0
5.0
4.0
3.0
2.0
1.0
0
0
20 40 60 80 100 120 140 160 180 200
LEAD TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
150
120
90
TJ=25 C
8.3ms Single Half
60 Sine Wave
JEDEC method
30
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
1400
1200
1000
800
600
400
200
0
.01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
10
5.0
1.0
0.1
o
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
100
10
TJ=75 C
1.0
.1
TJ=25 C
.01
0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
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Page 2/2
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MBR530NG rectifier
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MBR530NG
(MBR520NG - MBR5100NG) 5.0A Leaded Type Schottky Barrier Rectifiers - American First Semiconductor
