MBR0520G 반도체 회로 부품 판매점
(MBR0520G - MBR0540G) 0.5A Surface Mount Schottky Barrier Rectifiers
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 American First Semiconductor |
Low VF Chip Schottky Barrier Rectifier
MBR0520G THRU MBR0504G
0.5A Surface Mount Schottky Barrier
Rectifiers - 20V- 40V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500/228
• Suffix "-H" indicates Halogen free parts, ex. MBR0520G-H.
Package outline
SOD-123
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant
• Case: Molded plastic, SOD-123
• Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band
• Mounting Position: Any
• Weight: Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
VR = VRRM TJ = 25OC
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol
IO
IFSM
MIN.
TYP.
MAX. UNIT
0.5 A
15 A
IR
RθJA
CJ
TSTG
1.0 mA
42 OC/W
130 pF
-65 +175 OC
SYMBOLS
MBR0520G
MBR0530G
MBR0540G
V
*
RRM
1
(V)
20
30
40
V
*
RMS
2
(V)
14
21
28
V
*
R
3
(V)
20
30
40
V
*
F
4
(V)
0.38
0.40
0.40
Operating
temperature
TJ, (OC)
-55 to +100
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=0.5A
@ 2010 Copyright By American First Semiconductor
Page 1/2
MBR0520G THRU MBR0504G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
50
10
3.0
1.0
0.1
TJ=25 C
Pulse Width 300us
1% Duty Cycle
.01
.1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
1000
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
0.6
0.5
0.4
0.3 Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.2
0.1
0
0 20 40 60 80 100 120 140 160 180 200
LEAD TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
15
12
9
TJ=25 C
8.3ms Single Half
6 Sine Wave
JEDEC method
3
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
100
10
TJ=75 C
1 TJ=25 C
.1
0 20 40 60 80 100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
350
300
250
200
150
100
50
0
.01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
www.First-semi.com
Page 2/2
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제조업체: American First Semiconductor
( afs )
MBR0520G rectifier
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[ MBR0520G.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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