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LGE |
MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
Features
Io 1.0A
VRRM 20V~100V
Schottky chip
High surge forward current capability
Low VF
Applications
General purpose 1 phase Bridge
rectifier applications
Limiting Values(Absolute Maximum Rating)
Item
Symbol Unit
Conditions
Repetitive Peak Reverse
Voltage
VRRM
V
4.6 0.2
MBS
3.8 0.2
0.6 0.1
2.5 0.25
1.0 0.15
6.8 0.2
0.3 0.1
Dimensions in millimeters
MBSK
12S 14S 16S 18S 110S
20 40 60 80 100
Average Rectified Output
Current
On alumina substrate
IO
A 60Hz sine wave,
R-load, Ta=25℃
On glass-epoxi substrate
Surge(Non-
repetitive)Forward Current
IFSM
A
60HZ sine wave, 1 cycle, Tj=25℃
1.0
0.8
40
Current Squared Time
I2t A2S
1ms≤t<8.3ms Tj=25℃,Rating of per diode
6.6
Storage Temperature
Junction Temperature
Tstg ℃
Tj ℃
-55 ~+150
-55 ~+150
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
Item
Peak Forward Voltage
Symbol Unit
VFM
V
Test Condition
IFM=0.5A,
Pulse measurement, Rating of per diode
Max
0.55 0.65 0.85
Peak Reverse Current
IRRM mA VRM=VRRM , Pulse measurement, Rating of per diode
0.5
Thermal Resistance
RθJ-A
Between junction and ambient, On alumina substrate
℃/W
Between junction and ambient, On glass-epoxi
substrate
RθJ-L
Between junction and lead
76
134
20
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mail:[email protected]
Characteristics(Typical)
MBSK12S THRU MBSK110S
Schottky Bridge Rectifier
1.8
1.5
FIG1:Io-Ta Curve
soldering land
conductor layer
substrate thickness
①
1mm×1mm
35um
②
1mm×1mm
20um
0.64mm
70
60
1.2
on alumina substrate
0.9
0.6
0.3
on glass-epoxi substrate
sine wave R-load
with heatsink
50
40
30
20
10
00
0
40 80 120 160 1
Ta(℃)
FIG2:Surge Forward Current Capadility
sine wave
0 8.3ms 8.3ms
1cycle
non-repetitive
Tj=25℃
2 5 10 20 50 100
Number of Cycles
FIG3: Forward Voltage
6
4 MBSK12S~MBSK14S
2
1
FIG4:Typical Reverse Characteristics
100
Tj=150℃
10
0.5 1
MBSK18S~MBSK110S
MBSK16S
Ta=25℃
0.1
Tj=25℃
0.1
0.05
0.02
0.01
0.4 0.5 0.6 0.7
0.01
0.001
0.8 0.9
0
VF(V)
MBSK12S~MBSK14S
MBSK16S
MBSK18S~MBSK110S
20 40 60
80 100
Voltage(%)
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mail:[email protected]
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