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YANGJIE |
MBSK12M THRU MBSK110M
肖特基桥式整流器 Schottky Bridge Rectifier
■特征 Features
● Io 1.0A
● VRRM
20V~100V
● 肖特基芯片
Schottky chip
● 耐正向浪涌电流能力高
High surge forward current capability
● 低正向电压
Low VF
■用途 Applications
● 作一般电源单相桥式整流用
General purpose 1 phase Bridge
rectifier applications
■极限值(绝对最大额定值)
■外形尺寸和印记 Outline Dimensions and Mark
MBM
.157(4.00) .287(7.3)
.142(3.60) .248(6.3)
.209(5.3)
.189(4.8)
.193(4.90)
.177(4.50)
.033(0.84)
.022(0.56)
.053(1.53)
.037(0.95)
.013(0.33)
.0088(0.22)
.106(2.70)
.090(2.30)
.252(6.4)
.236(6.0)
.109(2.75)
.089(2.25)
Dimensions in inches and (millimeters)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
符号 单位
Symbol Unit
条件
Conditions
反向重复峰值电压
Repetitive Peak Reverse
Voltage
VRRM
V
MBSK
12M 14M 16M 18M 110M
20 40 60 80 100
平均整流输出电流
Average Rectified Output
Current
IO A
60Hz正弦波,电阻负载,Ta=25℃
60Hz sine wave, R-load, Ta=25℃
1.0
正向(不重复)浪涌电流
Surge(Non-
IFSM
A
repetitive)Forward Current
60HZ正弦波,一个周期,Tj=25℃
60HZ sine wave, 1 cycle, Tj=25℃
正向浪涌电流的平方对电流
浪涌持续时间的积分值
I2t
A2S
1ms≤t<8.3ms Tj=25℃,单个二极管
1ms≤t<8.3ms Tj=25℃,Rating of per diode
Current Squared Time
存储温度
Storage Temperature
Tstg ℃
结温
Junction Temperature
Tj ℃
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
参数名称
符号 单位
测试条件
Item
Symbol Unit
Test Condition
40
6.6
-55 ~+150
-55 ~+150
最大值
Max
正向峰值电压
Peak Forward Voltage
IFM=0.5A, 脉冲测试,单个二极管的额定值
VFM V IFM=0.5A, Pulse measurement, Rating of per
diode
0.55
0.65
0.85
反向峰值电流
Peak Reverse Current
VRM=VRRM ,脉冲测试,单个二极管的额定值
IRRM mA VRM=VRRM , Pulse measurement, Rating of
per diode
0.5
热阻
Thermal Resistance
RθJ-A
RθJ-L
℃/W
结和环境之间,安装在玻璃-环氧基板上
Between junction and ambient, On glass-
epoxi substrate
结和引线之间
Between junction and lead
134
20
Document Number 0005
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
MBSK12M THRU MBSK110M
■特性曲线(典型) Characteristics(Typical)
图1:Io-Ta曲线
FIG1:Io-Ta Curve
0.6
在玻璃-环氧基板上
on glass-epoxi substrate
70
0.5 60
0.4
0.3
0.2
正弦波,电阻负载,
空气中
0.1
sine wave R-load
free in air
焊接区(2*7)mm
铜箔35um
soldering land(2*7)mm
Cu layer 35um
50
40
30
20
10
00
0
40 80 120 160 1
Ta(℃)
图2:耐正向浪涌电流曲线
FIG2:Surge Forward Current Capadility
正弦波
sine wave
0 8.3ms 8.3ms
1cycle
不重复
non-repetitive
Tj=25℃
2 5 10 20 50 100
Number of Cycles
图3:正向电压曲线
FIG3: Forward Voltage
6
4 MBSK12M~MBSK14M
2
1
图4:反向电流曲线
FIG4:Typical Reverse Characteristics
100
Tj=150℃
10
0.5 1
MBSK18M~MBSK110M
MBSK16M
Ta=25℃
0.1
Tj=25℃
0.1
0.05
0.02
0.01
0.4 0.5 0.6 0.7
0.01
0.001
0.8 0.9
0
VF(V)
MBSK12M~MBSK14M
MBSK16M
MBSK18M~MBSK110M
20 40 60
80 100
Voltage(%)
Document Number 0005
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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