DSSK80-003B 반도체 회로 부품 판매점
Power Schottky Rectifier
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 IXYS |
Power Schottky Rectifier
with common cathode
VRSM
V
25
30
VRRM
V
25
30
Type
DSSK 80-0025B
DSSK 80-003B
DSSK 80-0025B
DSSK 80-003B
IFAV = 2x40 A
VRRM = 25 / 30 V
VF = 0.39 V
TO-247 AD
AC A
A
C
A
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
Symbol
IFRMS
IFAV
IFAV
IFSM
EAS
IAR
(dv/dt)cr
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
Maximum Ratings
TC = 130°C; rectangular, d = 0.5
TC = 130°C; rectangular, d = 0.5; per device
TVJ = 45°C; tp = 10 ms (50 Hz), sine
IAS = 6 A; L = 180 µH; TVJ = 25°C; non repetitive
VA =1.5 • VRRM typ.; f=10 kHz; repetitive
70
40
80
600
10
6
5000
A
A
A
A
mJ
A
V/µs
-55...+150
150
-55...+150
°C
°C
°C
TC = 25°C
mounting torque
155
0.8...1.2
W
Nm
typical
6g
Features
• International standard package
• Very low VF
• Extremely low switching losses
• Low IRM-values
• Epoxy meets UL 94V-0
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
Symbol
IR
VF
RthJC
RthCH
Conditions
TVJ = 25°C VR = VRRM
TVJ = 100°C VR = VRRM
IF = 40 A;
IF = 40 A;
IF = 80 A;
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
Characteristic Values
typ. max.
40 mA
250 mA
0.39 V
0.48 V
0.56 V
0.8
0.25
K/W
K/W
Dimensions see pages D2 - 87-88
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
1-2
Free Datasheet http://www.datasheet4u.com/
DSSK 80-0025B
DSSK 80-003B
100
A
IF
10
TVJ =
150°C
125°C
25°C
10000
mA
TVJ = 150°C
1000
IR
100 125°C
100°C
10
75°C
1 50°C
1
0.0 0.2 0.4
VF
Fig. 1 Maximum forward voltage
drop characteristics
V0.6
80
A
70
60
IF(AV)
50
d = 0.5
DC
40
30
20
10
0
0 40 80 120 160 °C
TC
Fig. 4 Average forward current IF(AV)
versus case temperature TC
1
0.1 25°C
05
10 15 20 V 25
VR
Fig. 2 Typ. value of reverse current IR
versus reverse voltage V
R
40
W
35
P(AV)
30
25
20
d=
DC
0.5
15 0.33
0.25
10 0.17
0.08
5
0
0 10 20 30 40 50 60 A
IF(AV)
Fig. 5 Forward power loss
characteristics
10000
pF
CT
TVJ= 25°C
1000
0
5 10 15 20 V 25
VR
Fig. 3 Typ. junction capacitance CT
versus reverse voltage V
R
A
IFSM
µs
tP
K/W
D=0.5
ZthJC
0.33
0.25
0.17
0.08
0.1
Single Pulse
0.001
0.01
0.1
DSSK 80-0025B
1 s 10
t
Fig. 6 Transient thermal impedance junction to case at various duty cycles
Note: All curves are per diode
© 2002 IXYS All rights reserved
2-2
Free Datasheet http://www.datasheet4u.com/
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제조업체: IXYS
( ixys )
DSSK80-003B rectifier
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[ DSSK80-003B.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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