FD6M016N03 반도체 회로 부품 판매점
30V/80A Synchronous Rectifier Module
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 Fairchild Semiconductor |
FD6M016N03
30V/80A Synchronous Rectifier Module
June 2008
Power-SPMTM
tm
General Features
• Very High Rectification Efficiency at Output 12V
• Integrated Solution for Saving Board Space
• RoHS Compliant
MOSFET Features
• VDSS = 30V
• QG(TOTAL) = 132nC(Typ.), VGS = 5V
• RDS(ON) = 1.3mΩ(Typ.), VGS = 10V, ID = 40A
• Low Miller Charge
• Low Qrr Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Fully Isolated package
General Description
The FD6M016N03 is one product in the Power-SPMTM family
that Fairchild has newly developed and designed to be most
suitable for more compact and more efficient synchronous recti-
fication applications such as internet server power supplies and
telecom system power supplies. For higher efficiency, it includes
built-in very low RDS(ON) MOSFETs. This Power-SPM device
can be used in the secondary side of the PWM transformer of
forward/bridge converter to provide high current rectification at
output voltages ranging from 12 Volts down to 5 Volts. With this
product, it is possible to design the secondary side of power
supply systems with reduced parasitic elements resulting in
minimized voltage spike and EMI noise.
Applications
• High Current Isolated Converter
• Distributed Power Architectures
• Synchronous rectifivation
• DC/DC Converter
• Battery supplied application
• ORing MOSFET
1
Block Diagram
10
G2
9
15
EPM15 Package
D2 15
8
G1
6
7
14
13
S2
12
11
D1 S1
1 2345
Figure 1. FD6M016N03 Module Block Diagram
©2008 Fairchild Semiconductor Corporation
FD6M016N03 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
Pin Configuration and Pin Description
Top View
D1
S1
G1 NC G2
S2
D2
NC NC
Figure 2. Pinmap of FD6M016N03
Pin Number
1
2~5
6
7
8
9
10
11 ~ 14
15
Pin Name
D1
S1
G1
NC
NC
NC
G2
S2
D2
Pin Description
Drain of Q1, MOSFET
Source of Q1, MOSFET
Gate of Q1, MOSFET
No Connection
No Connection
No Connection
Gate of Q2, MOSFET
Source of Q2, MOSFET
Drain of Q2, MOSFET
Absolute Maximum Ratings TC = 25°C, Unless Otherwise Specified
Symbol
VDS
VGS
ID
EAS
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current, Continuous (VGS = 10V)
Single Pulse Avalanche Energy
Operating and Storage Temperature Range
(Note1)
(Note1)
(Note1,2)
Rating
30
±20
80
1584
-40 ~ 150
Unit
V
V
A
mJ
°C
Thermal Resistance
Symbol
RθJC
Parameter
Junction to Case Thermal Resistance
Note:
1. Each MOSFET Switch
2. Starting TJ = 25°C, VD = 20V, L = 0.25mH, IAS = 65A
(Note1)
Min.
-
Typ.
-
Max.
3.9
Unit
°C/W
FD6M016N03 Rev. A
2 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
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제조업체: Fairchild Semiconductor
( fairchild )
FD6M016N03 rectifier
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[ FD6M016N03.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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