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VT1080S 반도체 회로 부품 판매점

Trench MOS Barrier Schottky Rectifier



Vishay 로고
Vishay
VT1080S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
VT1080S, VIT1080S
Vishay General Semiconductor
Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.52 V at IF = 5 A
TO-220AB
TMBS ®
TO-262AA
K
VT1080S
PIN 1
3
2
1
PIN 2
PIN 3
CASE
VIT1080S
PIN 1
3
2
1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
80 V
IFSM
100 A
VF at IF = 10 A
0.60 V
TJ max.
150 °C
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
dV/dt
Operating junction and storage temperature range
TJ, TSTG
VT1080S
VIT1080S
80
10
100
10 000
- 55 to + 150
UNIT
V
A
A
V/μs
°C
Document Number: 89238 For technical questions within your region, please contact one of the following:
Revision: 23-Mar-11
[email protected], [email protected], [email protected]
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/

VT1080S 데이터시트, 핀배열, 회로
www.DataSheet.co.kr
New Product
VT1080S, VIT1080S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode
VR = 80 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.57
0.67
0.52
0.60
20
10
MAX.
-
0.81
-
0.70
600
20
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VT1080S
VIT1080S
Typical thermal resistance
RθJC
2.2
UNIT
V
μA
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
VT1080S-M3/4W
1.88
TO-262AA
TO-220AB
TO-262AA
VIT1080S-M3/4W
VT1080SHM3/4W (1)
VIT1080SHM3/4W (1)
1.43
1.88
1.43
Note
(1) AEC-Q101 qualified
PACKAGE CODE
4W
4W
4W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
8
6
4
2
0
0 25 50 75 100 125 150 175
Case Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
8
D = 0.5 D = 0.8
7 D = 0.3
6 D = 0.2
5 D = 0.1
D = 1.0
4
3T
2
1
D = tp/T
tp
0
0 2 4 6 8 10 12
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89238
[email protected], [email protected], [email protected]
Revision: 23-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Datasheet pdf - http://www.DataSheet4U.net/



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