VFT4060C 반도체 회로 부품 판매점
Dual Trench MOS Barrier Schottky Rectifier
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New Product
VFT4060C
Vishay General Semiconductor
Dual Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.32 V at IF = 5.0 A
TMBS ®
ITO-220AB
123
VFT4060C
PIN 1
PIN 2
PIN 3
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
PRIMARY CHARACTERISTICS
IF(AV)
2 x 20 A
VRRM
60 V
IFSM
240 A
VF at IF = 20 A
0.48 V
TJ max.
150 °C
MECHANICAL DATA
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, and commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
VRRM
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
Voltage rate of change (rated VR)
Isolation voltage from termal to heatsink t = 1 min
Operating junction and storage temperature range
dV/dt
VAC
TJ, TSTG
VFT4060C
60
40
20
240
10 000
1500
- 40 to + 150
UNIT
V
A
A
V/μs
V
°C
Document Number: 89379 For technical questions within your region, please contact one of the following:
Revision: 07-Dec-10
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Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
VFT4060C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Instantaneous forward voltage per diode
IF = 5.0 A
IF = 10 A
IF = 20 A
IF = 5.0 A
IF = 10 A
IF = 20 A
Reverse current per diode
VR = 60 V
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VF (1)
IR (2)
TYP.
0.43
0.48
0.53
0.32
0.39
0.48
-
34
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
per diode
per device
RθJC
VFT4060C
5.0
3.0
MAX.
-
-
0.62
-
-
0.57
6.0
190
UNIT
V
mA
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
ITO-220AB
VFT4060C-E3/4W
1.75
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
45
40
35
30
25
20
15
10
5
0
0
25 50 75 100 125
Case Temperature (°C)
150
Fig. 1 - Maximum Forward Current Derating Curve
14
D = 0.5 D = 0.8
12 D = 0.3
10
D = 0.2
8
6 D = 0.1
4
D = 1.0
T
2
D = tp/T
tp
0
0 4 8 12 16 20 24
Average Forward Current (A)
Fig. 2 - Forward Power Dissipation Characteristics Per Diode
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For technical questions within your region, please contact one of the following: Document Number: 89379
Revision: 07-Dec-10
Datasheet pdf - http://www.DataSheet4U.net/
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VFT4060C rectifier
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