M3035S 반도체 회로 부품 판매점
(M3035S / M3045S) Schottky Barrier Rectifier
|
|
 Vishay Siliconix |
www.DataSheet.co.kr
New Product
M3035S, M3045S
Vishay General Semiconductor
Schottky Barrier Rectifier
TO-220AB
M3035S,
M3045S
3
2
1
PIN 1
PIN 2
PIN 3
CASE
PRIMARY CHARACTERISTICS
IF(AV)
30 A
VRRM
35 V, 45 V
IFSM
200 A
VF at IF = 30 A
0.61 V
TJ max.
150 °C
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection applications.
MECHANICAL DATA
Case: TO-220AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
IRRM
dV/dt
TJ
TSTG
M3035S
M3045S
35 45
30
200
2.0
10 000
- 65 to + 150
- 65 to + 175
UNIT
V
A
A
A
V/µs
°C
°C
Document Number: 89157 For technical questions within your region, please contact one of the following:
Revision: 17-Nov-09
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
New Product
M3035S, M3045S
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous
forward voltage
Maximum instantaneous
reverse current at rated VR
Typical junction capacitance
IF = 15 A
IF = 30 A
TJ = 25 °C
IF = 15 A
IF = 30 A
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
4.0 V, 1 MHz
VF (1)
IR (2)
CJ
0.54
0.65
0.46
0.61
40
26
980
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
0.70
-
0.66
200
55
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M3035S
M3045S
Typical thermal resistance
RθJC
2.0
UNIT
V
µA
mA
pF
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N UNIT WEIGHT (g)
TO-220AB
M3045S-M3/4W
1.878
PACKAGE CODE
4W
BASE QUANTITY
50/tube
DELIVERY MODE
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
35
30
25
20
15
10
5
0
0 25 50 75 100 125 150
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
300
TJ = TJ Max.
250 8.3 ms Single Half Sine-Wave
200
150
100
50
0
1 10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 89157
Revision: 17-Nov-09
Datasheet pdf - http://www.DataSheet4U.net/
|
PDF 파일 내의 페이지 : 총 4 페이지
제조업체: Vishay Siliconix
( vishay )
M3035S rectifier
데이터시트 다운로드 :
[ M3035S.PDF ]
[ M3035S 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
