GI850 반도체 회로 부품 판매점
(GI850 - GI858) Fast Switching Plastic Rectifier
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 Vishay Siliconix |
www.DataSheet.co.kr
GI850 thru GI858
Vishay General Semiconductor
Fast Switching Plastic Rectifier
DO-201AD
PRIMARY CHARACTERISTICS
IF(AV)
3.0 A
VRRM
50 V to 800 V
IFSM
100 A
trr 200 ns
IR 10 μA
VF 1.25 V
TJ max.
150 °C
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
Note
• These devices are not AEC-Q101 qualified.
MECHANICAL DATA
Case: DO-201AD, molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GI850 GI851
Maximum repetitive peak reverse voltage
VRRM
50
100
Maximum RMS voltage
VRMS
35
70
Maximum DC blocking voltage
VDC 50 100
Maximum non-repetitive peak reverse voltage
VRSM
75
150
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 90 °C
IF(AV)
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
Operating junction and
storage temperature range
TJ, TSTG
GI852
200
140
200
250
GI854
400
280
400
450
3.0
100
- 50 to + 150
GI856
600
420
600
650
GI858
800
560
800
880
UNIT
V
V
V
V
A
A
°C
Document Number: 88630 For technical questions within your region, please contact one of the following:
Revision: 10-Nov-09
www.vishay.com
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Datasheet pdf - http://www.DataSheet4U.net/
www.DataSheet.co.kr
GI850 thru GI858
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL GI850 GI851 GI852
GI854
Maximum
instantaneous
forward voltage
3.0 A
9.4 A
TA = 25 °C
TJ = 175 °C
VF
1.25
1.10
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
IR
10
150 150 200 250
Maximum reverse
recovery current
Maximum reverse
recovery time
Typical junction
capacitance
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
4.0 V, 1 MHz
IRM(REC)
trr
CJ
200
2.0
28
GI856
300
GI858 UNIT
V
μA
500
ns
A
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GI850 GI851 GI852
GI854
GI856
GI858 UNIT
Typical thermal resistance
RθJA (1)
RθJL (1)
22
°C/W
8.0
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
GI856-E3/54
1.1
54
GI856-E3/73
1.1
73
BASE QUANTITY
1400
1000
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
8.0
L = Lead Length
TL = Lead Temperature
6.0
4.0
L
L
=
0=.307.255""(9(.65.3mmmm) )
0.8" x 0.8" x 0.04"
(20 mm x 20 mm x 1 mm)
Copper Heatsink
2.0 TA = Ambient Temperature
0.375" (9.5 mm) Lead Length
0
30 50 70 90 110 130 150 170
Temperature (°C)
Fig. 1 - Forward Current Derating Curves
1000
8.3 ms Single Half Sine-Wave
TJ = 25 °C
100 Non-Repetitive
TJ = 150 °C
TJ = 25 °C
Repetitive
TJ = 150 °C
10
1
10 100
Number of Cycles at 60 Hz
Fig. 2 - Maximum Peak Forward Surge Current
www.vishay.com
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For technical questions within your region, please contact one of the following: Document Number: 88630
Revision: 10-Nov-09
Datasheet pdf - http://www.DataSheet4U.net/
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제조업체: Vishay Siliconix
( vishay )
GI850 rectifier
데이터시트 다운로드 :
[ GI850.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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