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SDR63CAJ 반도체 회로 부품 판매점

(SDR66xxJ) 40A 35nsec 300-600 V Hyper Fast Centertap Rectifier



Solid States Devices 로고
Solid States Devices
SDR63CAJ 데이터시트, 핀배열, 회로
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR62 __ __ __ __ __
¦¦
¦¦
¦¦
¦
¦
¦
¦¦
¦¦
¦¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
+ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
¦ + Leg Bend Option
¦ (See Figure 1)
+
Package J = TO-257(J)
¦
¦
¦
¦
+
Configuration CT = Common Cathode,
CA = Common Anode, D = Doubler,
¦ DR = Doubler Reverse
+ Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V
SDR623CTJ
Thru
SDR626DRJ
40A 35nsec 300-600 V
Hyper Fast Centertap Rectifier
Features:
Hyper Fast Recovery: 35nsec Maximum 3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Isolated Hermetically Sealed Package
Gold Eutectic Die Attach
Ultrasonic Aluminum Wire Bonds
Availabl e in Common Anode, Common Cathode,
Doubler, and Doubler Reverse Configurations
Custom Lead Forming Available
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings
Peak Repetitive Reverse Voltage
SDR623__J
SDR624__J
SDR625__J
SDR626__J
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C) 5/
Operating & Storage Temperature
www.DataSheet4U.net
Maximum Total Thermal Resistance
Junction to Case 4/
Junction to Case 5/
Symbol
VRRM
VRWM
VR
Io
IFSM
TOP & TSTG
Rθ JC
Value
300
400
500
600
40
200
-65 to +175
1.0
2.1
Units
Volts
Amps
Amps
ºC
ºC/W
- Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp.
4/ Both Legs Tied Together.
5/ Per Leg.
TO -257(J)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0051D
DOC


SDR63CAJ 데이터시트, 핀배열, 회로
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics, per leg
Instantaneous Forward Voltage Drop
(IF = 10Adc, Pulse)
(IF = 20Adc, Pulse)
Instantaneous Forward Voltage Drop
(IF = 10Adc, Pulse)
Reverse Leakage Current
(100% of rated VR, Pulse)
Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC)
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
Figure 1- Optional Lead Bends
Suffix JDB
TO-257(J) Outline:
www.DataSheet4U.net
Suffix JUB
SDR623CTJ
Thru
SDR626DRJ
Symbol
TA = 25 ºC
TA = 25 ºC
TA = 100 ºC
TA = -55 ºC
TA = 25 ºC
TA = 100 ºC
VF1
VF2
VF3
VF4
IR1
IR2
tRR
CJ
Max
1.4
1.7
1.3
1.5
50
5
35
150
Units
VDC
VDC
µA
mΑ
nsec
pF
Code
CT
CA
D
DR
PIN ASSIGNMENT
FUNCTION
Pin 1 Pin 2 Pin 3
Common Cathode Anode1 Cathode Anode2
Common Anode
Cathode1 Anode Cathode2
Doubler
Cathode Common Anode
Doubler Reverse
Anode Common Cathode
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RH0051D
DOC




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