APTGF20X60RTP2 반도체 회로 부품 판매점
Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module
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 Advanced Power Technology |
APTGF20X60RTP2
APTGF20X60BTP2www.DataSheet4U.com
Input rectifier bridge +
Brake + 3 Phase Bridge
NPT IGBT Power Module
VCES = 600V
IC = 20A @ Tc = 80°C
APTGF20X60RTP2: Without Brake (Pin 7 & 14 not connected)
20 19 18 17 16 15 14 13 12 11 10
21 9
22 8
23 7
24
Application
• AC Motor control
Features
• Non Punch Through (NPT) Fast IGBT®
- Low voltage drop
- Low tail current
- Switching frequency up to 50 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring
Benefits
• Low conduction losses
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
1 2 3 45 6
All ratings @ Tj = 25°C unless otherwise specified
1. Absolute maximum ratings
Diode rectifier Absolute maximum ratings
Symbol
Parameter
VRRM
ID
Repetitive Peak Reverse Voltage
DC Forward Current
IFSM Surge Forward Current
tp = 10ms
TC = 80°C
Tj = 25°C
Tj = 150°C
Max ratings
1600
20
300
230
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
Unit
V
A
APT website – http://www.advancedpower.com
1-4
APTGF20X60RTP2
APTGF20X60BTP2www.DataSheet4U.com
IGBT & Diode Brake (only for APTGF20X60BTP2) Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM Pulsed Collector Current
VGE Gate – Emitter Voltage
PD Maximum Power Dissipation
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
IF DC Forward Current
TC = 80°C
IGBT & Diode Inverter Absolute maximum ratings
Symbol
Parameter
VCES Collector - Emitter Breakdown Voltage
IC Continuous Collector Current
ICM
VGE
PD
SCSOA
IF
IFSM
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Short circuit Safe Operating Area
DC Forward Current
Surge Forward Current
tp = 1ms
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
TC = 80°C
TC = 80°C
Max ratings
600
20
10
25
±20
80
10
Max ratings
600
35
20
70
±20
125
80A @ 360V
20
40
Unit
V
A
V
W
A
Unit
V
A
V
W
A
2. Electrical Characteristics
Diodes Rectifier Electrical Characteristics
Symbol Characteristic
IR Reverse Current
VF Forward Voltage
RthJC Junction to Case
Test Conditions
Min Typ Max Unit
VR = 1600V
IF = 30A
IF = 20A
Tj = 150°C
Tj = 25°C
Tj = 150°C
2 mA
1.3 1.5
1 1.05
V
1 °C/W
IGBT Brake & Diode (only for APTGF20X60BTP2) Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
ICES Zero Gate Voltage Collector Current
VGE = 0V
VCE = 600V
Tj = 25°C
Tj = 125°C
0.5 500 µA
0.8 mA
VCE(on)
VGE(th)
IGES
Cies
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
VF Forward Voltage
RthJC Junction to Case
VGE = 15V
IC = 10A
Tj = 25°C
Tj = 125°C
1.95 2.35
2.2
V
VGE = VCE , IC = 0.35 mA
4.5 5.5 6.5 V
VGE = 20V, VCE = 0V
300 nA
VGE = 0V, VCE = 25V
f = 1MHz
800 pF
VGE = 0V
IF = 20A
Tj = 25°C
Tj = 125°C
1.25 1.75
1.2
V
IGBT
Diode
1.5
1.5
°C/W
APT website – http://www.advancedpower.com
2-4
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제조업체: Advanced Power Technology
( apt )
APTGF20X60RTP2 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
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전력반도체 문의 : 010-3582-2743
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APTGF20X60RTP2
Input rectifier bridge Brake 3 Phase Bridge NPT IGBT Power Module - Advanced Power Technology
