30ETH06 반도체 회로 부품 판매점
Hyperfast Rectifier
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 Vishay Siliconix |
www.datasheet4u.com
30ETH06
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED PtTM
Base
common
cathode
2
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Dual diode center tap
• Designed and qualified for industrial level
TO-220AC
1
Cathode
3
Anode
PRODUCT SUMMARY
trr (typical)
IF(AV)
VR
28 ns
30 A
600 V
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Peak repetitive reverse voltage
VRRM
Average rectified forward current
IF(AV)
Non-repetitive peak surge current
Operating junction and storage temperatures
IFSM
TJ, TStg
TEST CONDITIONS
TC = 103 °C
TJ = 25 °C
VALUES
600
30
200
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Breakdown voltage,
blocking voltage
Forward voltage
VBR,
VR
VF
IR = 100 µA
IF = 30 A
IF = 30 A, TJ = 150 °C
600
-
-
Reverse leakage current
VR = VR rated
IR
TJ = 150 °C, VR = VR rated
-
-
Junction capacitance
CT VR = 600 V
-
Series inductance
LS
Measured lead to lead 5 mm from package body
-
TYP.
-
2.0
1.34
0.3
60
33
8.0
MAX.
-
2.6
1.75
50
500
-
-
UNITS
V
µA
pF
nH
Document Number: 93018
Revision: 23-Jun-08
For technical questions, contact: [email protected]
www.vishay.com
1
30ETH06www.datasheet4u.com
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED PtTM
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
Reverse recovery time
IF = 1.0 A, dIF/dt = 50 A/µs, VR = 30 V
trr TJ = 25 °C
-
-
28
31
Peak recovery current
Reverse recovery charge
IRRM
Qrr
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/µs
VR = 200 V
-
-
-
-
-
77
3.5
7.7
65
345
MAX.
35
-
-
-
-
-
-
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
TJ, TStg
RthJC
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth
and greased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
MAX.
175
0.7 1.1
- 70
0.2 -
2.0 -
0.07 -
12
-
(10)
30ETH06
UNITS
°C
°C/W
g
oz.
kgf · cm
(lbf · in)
www.vishay.com
2
For technical questions, contact: [email protected]
Document Number: 93018
Revision: 23-Jun-08
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30ETH06 rectifier
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