파트넘버.co.kr ES1PB 데이터시트 PDF


ES1PB 반도체 회로 부품 판매점

(ES1Px) High Current Density Surface Mount Ultrafast Rectifiers



Vishay Siliconix 로고
Vishay Siliconix
ES1PB 데이터시트, 핀배열, 회로
New Product
ES1PA thru ES1PD
Vishay Semiconductors
formerly General Semiconductor
0.086 (2.18)
0.074 (1.88)
High Current Density Surface Mount Ultrafast Rectifiers
Case Style SMP
Cathode band
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
Features
Reverse Voltage 50 to 200 V
Forward Current 1.0 A
Reverse Recovery Time 15 ns
• Very low profile - typical height of 1.0mm
• For surface mount application
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Built in strain relief, ideal for automated placement
• High temperature soldering:
260°C maximum/10 seconds at terminals
• Meets MSL level 1 per J-STD-020C
0.013 (0.35)
0.004 (0.10)
0.012 (0.30)
0.000 (0.00)
0.045 (1.15)
0.033 (0.85)
0.018 (0.45)
0.006 (0.15)
0.012 (0.30) REF
Mechanical Data
Case: SMP
Terminals: Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0009 oz., 0.024 g
Epoxy meets UL 94V-0 flammability rating
Dimensions in inches
and (millimeters)
Mounting Pad Layout
0.105
(2.67)
0.025
(0.635)
0.030
(0.762)
0.053 (1.35)
0.041 (1.05)
0.103 (2.60)
0.087 (2.20)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.100
(2.54)
0.050
(1.27)
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol ES1PA ES1PB ES1PC
Device marking code
EA EB
EC
Maximum reverse voltage
VRM
50 100
150
Maximum average forward rectified current see Fig.1
IF(AV)
1.0
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
IFSM
30
Typical thermal resistance (1)
Operating junction and Storage temperature range
RθJA
RθJL
RθJC
TJ, TSTG
105
15
20
–55 to +150
ES1PD
ED
200
Unit
V
A
A
°C/W
°C
Electrical Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
Unit
Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25°C
at IF=1A, TJ=25°C
Maximum reverse current
at rated VRM(2)
TJ = 25°C
TJ =125°C
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A
Typical reverse recovery time at
TJ=25°C
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Typical reverse recovery time at
TJ=25°C
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Typical junction capacitance at 4.0V, 1MHz
VF
IR
trr
trr
Qrr
CJ
0.865
0.920
5.0
500
15
25
30
8
10
10
V
µA
ns
ns
nC
pF
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the ter-
minal of cathode band. RθJC is measured at the top centre of the body
(2) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88918
23-Sep-04
www.vishay.com
1


ES1PB 데이터시트, 핀배열, 회로
ES1PA thru ES1PD
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Derating Curve
1.2
1.0
0.8
0.6
0.4
TL measured
at the cathode band terminal
0.2
0
80
100
90 100 110 120 130 140
Lead Temperature (°C)
Fig. 3 – Typical Instantaneous
Forward Characteristics
150
10
TJ = 150°C
1
TJ = 25°C
0.1
0.01
0.2
TJ = 125°C
0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
1.4
Fig. 5 – Typical Junction Capacitance
100
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
30
25
20
15
10
05
0
1 10 100
Number of Cycles at 50 HZ
10000
Fig. 4 – Typical Reverse Leakage
Characteristics
1000
TJ = 150°C
100
TJ = 125°C
10
1
TJ = 25°C
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient Thermal
Impedance
1000
100
10
10
1
0.1
www.vishay.com
2
1 10
Reverse Voltage (V)
100
1
0.01
0.1 1 10
t, Pulse Duration (sec.)
100
Document Number 88918
23-Sep-04




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