11DF1 반도체 회로 부품 판매점
(11DF1 / 11DF2) ULTRA FAST RECTIFIER DIODES
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 EIC discrete Semiconductors |
11DF1 - 11DF2
PRV : 100 - 200 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
www.DataSheet4U.com * High reliability
* Low reverse current
* Low forward voltage drop
* Superfast recovery time
ULTRA FAST RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 63 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave
Superimposed on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
Maximum DC Reverse Current at VRRM
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
Trr
TJ
TSTG
Note : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
11DF1
11DF2
100 200
70 140
100 200
1.0
30
0.98
10
35
- 65 to + 150
- 65 to + 150
UNIT
V
V
V
A
A
V
µA
ns
°C
°C
Page 1 of 2
Rev. 02 : October 8, 2005
www.DataSheet4U.com
RATING AND CHARACTERISTIC CURVES ( 11DF1 - 11DF2 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 Ω
10 Ω
+ 0.5
Trr
+
50 Vdc
(approx)
D.U.T.
PULSE
GENERATOR
( NOTE 2 )
0
- 0.25
1 Ω OSCILLOSCOPE
( NOTE 1 )
- 1.0 A
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
1 cm
SET TIME BASE FOR 15 ns/cm
FIG.2 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
1.0
0.8
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
30
8.3 ms SINGLE HALF SINE WAVE
Ta = 40 °C
24
0.6 18
0.4 12
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, ( °C)
6
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 25 °C
1.0
10
TJ = 100 °C
1.0
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS
0.1
TJ = 25 °C
0.0
10
20 40
60
80 100
12
0
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
Page 2 of 2
Rev. 02 : October 8, 2005
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제조업체: EIC discrete Semiconductors
( eic )
11DF1 rectifier
데이터시트 다운로드 :
[ 11DF1.PDF ]
[ 11DF1 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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