SB1060DC 반도체 회로 부품 판매점
(SB1020DC - SB10100DC) 10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
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 Won-Top Electronics |
www.DataSheet4U.com
WTE
POWER SEMICONDUCTORS
SB1020DC – SB10100DC Pb
10A SURFACE MOUNT DUAL SCHOTTKY BARRIER RECTIFIER
Features
! Schottky Barrier Chip
! Guard Ring Die Construction for
A
Transient Protection
! Low Forward Voltage Drop
! Low Power Loss, High Efficiency
! High Surge Current Capability
! For Use in Low Voltage, High Frequency
B
D
PIN 1
2
E
3
Inverters, Free Wheeling, and Polarity
G
Protection Applications
H
K
C
J
Mechanical Data
! Case: D2PAK/TO-263, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: See Diagram
! Weight: 1.7 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
PIN 1 -
PIN 3 -
PP
+
Case, PIN 2
D2 PAK/TO-263
Dim Min
Max
A 9.80 10.40
B 9.60 10.60
C 4.40 4.80
D 8.50 9.10
E 2.80
—
G 1.00 1.40
H — 0.90
J 1.20 1.40
K 0.30 0.70
P 2.35 2.75
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Symbol SB SB SB SB SB SB SB SB Unit
1020DC 1030DC 1040DC 1045DC 1050DC 1060DC 1080DC 10100DC
VRRM
VRWM 20 30 40 45 50 60 80 100 V
VR
VR(RMS)
14
21
28
32
35
42
56
70
V
Average Rectified Output Current @TC = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed
on rated load (JEDEC Method)
Forward Voltage
@IF = 5.0A
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
IO
IFSM
VFM
IRM
Cj
RJC
Tj, TSTG
0.55
10
150
0.75
0.5
50
600
3.0
-65 to +150
0.85
A
A
V
mA
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance junction to case mounted on heatsink.
SB1020DC – SB10100DC
1 of 4
© 2006 Won-Top Electronics
10
8
6
4
2
Single Pulse Half-Wave
60 Hz Resistive or Inductive Load
0
10 40 60 80
100
120
140150
TC, CASE TEMPERATURE (ºC)
Fig. 1 Forward Current Derating Curve
40
1020DC - 1045DC
20
1050DC - 1060DC
1080DC - 10100DC
10
Tj = 25ºC
Pulse Width = 300 µs
2% Duty Cycle
1
0 0.5 1.0 1.5 2.0 2.5
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
150
120
90
60
2000
1000
Tj = 25ºC
f = 1MHz
30
8.3ms Single Half Sine-Wave
JEDEC Method
0
1 10 100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Maximum Non-Repetitive Peak Fwd Surge Current
100
0.1
1.0
10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
SB1020DC – SB10100DC
2 of 4
© 2006 Won-Top Electronics
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SB1060DC rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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전력반도체 문의 : 010-3582-2743
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