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SDR624DRZ 반도체 회로 부품 판매점

(SDR623DRZ - SDR626DRZ) Hyper Fast Centertap Rectifier



SSDI 로고
SSDI
SDR624DRZ 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
SDR62 __ __ __ __ __
¦¦
¦¦
¦¦
¦
¦
¦
¦¦
¦¦
¦¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
¦
+ Screening 2/ __ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
¦ + Leg Bend Option
¦ (See Figure 1)
+
Package M = TO-254, Z = TO-254Z
¦
¦
¦
¦
+
Configuration CT = Common Cathode,
CA = Common Anode, D = Doubler,
¦ DR = Doubler Reverse
+ Voltage 3 = 300V, 4 = 400V, 5 = 500V, 6 = 600V
SDR623CTM & Z
Thru
SDR626DRM & Z
40A 35nsec 300-600 V
Hyper Fast Centertap Rectifier
Features:
Hyper Fast Recovery: 35nsec Maximum 3/
High Surge Rating
Low Reverse Leakage Current
Low Junction Capacitance
Hermetically Sealed Package
Gold Eutectic Die Attach
Ultrasonic Aluminum Wire Bonds
Available in Common Anode, Common Cathode,
Doubler, and Doubler Reverse Configurations
Ceramic Seal for Improved Hermeticity Available
TX, TXV, and S-Level Screening Available 2/
Maximum Ratings
Symbol
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
(Resistive Load, 60 Hz Sine Wave, TA = 25 °C) 4/
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave, TA = 25 °C) 5/
SDR623__M & Z
SDR624__M & Z
SDR625__M & Z
SDR626__M & Z
Operating & Storage Temperature
Maximum Total Thermal Resistance
Junction to Case 4/
Junction to Case 5/
VRRM
VRWM
VR
Io
IFSM
TOP & TSTG
Rθ JC
Value
300
400
500
600
40
200
-65 to +200
1.0
2.0
Units
Volts
Amps
Amps
ºC
ºC/W
- Notes:
1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.
2/ Screened to MIL-PRF-19500.
3/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, rec. to .25 Amp.
4/ Both Legs Tied Together.
5/ Per Leg.
- TO-254 (M)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
- TO-254Z (Z)
DATA SHEET #: RH0049C
DOC


SDR624DRZ 데이터시트, 핀배열, 회로
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
Electrical Characteristics, per leg
Instantaneous Forward Voltage Drop
(IF = 10Adc, Pulse)
(IF = 20Adc, Pulse)
Instantaneous Forward Voltage Drop
(IF = 10Adc, Pulse)
Reverse Leakage Current
(80% of rated VR, Pulse)
Reverse Recovery Time
(IF = 0.5A, IR = 1A, IRR = 0.25A, TA = 25ºC)
Junction Capacitance
(VR = 10VDC, TA = 25ºC, f = 1MHz)
Figure 1- Optional Lead Bends
Suffix MDB & ZDB
Suffix MU & ZU
TO-254 (Suffix M) Outline:
SDR623CTM & Z
Thru
SDR626DRM & Z
Symbol
TA = 25 ºC
TA = 25 ºC
TA = 100 ºC
TA = -55 ºC
TA = 25 ºC
TA = 100 ºC
VF1
VF2
VF3
VF4
IR1
IR2
tRR
CJ
Max
1.35
1.55
1.25
1.45
50
5
35
150
Units
VDC
VDC
µA
mΑ
nsec
pF
Code
CT
CA
D
DR
PIN ASSIGNMENT
FUNCTION
Pin 1 Pin 2 Pin 3
Common Cathode
Anode Cathode Anode
Common Anode
Cathode Anode Cathode
Doubler
Cathode Common Anode
Doubler Reverse
Anode Common Cathode
TO-254Z (Suffix Z) Outline:
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
Measured in Inches
DATA SHEET #: RH0049C
DOC




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SDR624DRZ rectifier

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