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MP1001-G 반도체 회로 부품 판매점

(MP1000-G - MP1010-G) Silicon Bridge Rectifiers



Comchip Technology 로고
Comchip Technology
MP1001-G 데이터시트, 핀배열, 회로
www.DataSheet4U.com
Silicon Bridge Rectifiers
MP1000-G THRU MP1010-G (RoHS Device)
Reverse Voltage: 50 ~ 1000 Volts
Forward Current: 10 Amp
Features:
Diffused Junction
High Current Capability
High Case Dielectric Strength
High Surge Current Capability
Ideal for Printed Circuit Board Application
Plastic Material has Underwriters
Laboratory Flammability Classification 94V-0
Mechanical Data:
Case: Molded Plastic
Terminals: Plated Leads Solderable Per MIL
STD-202, Method 208
Weight: 5.4 grams (approx.)
Mounting position: Through Hole for #6
Screw
MP-10
J
G
H
+~
E
~-
E
A
D
C
B
Metal Heat Sink
KBP
Dim Min. Max
A 14.73 15.75
B 5.80 6.90
C 19.00
-
D 1.00 O Typical
E 5.11 6.14
G Hole for #6 screw
3.60 4.00
J 10.30 11.30
I 2.38x45ºC Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate currently by 20%.
Characteristics
Symbol
MP
1000-G
MP MP MP KBP KBP KBP
1001-G 1002-G 1004-G 1006-G 1008-G 1010-G
UNIT
Peak Repetitive Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM 50
100 200 400 600 800 1000
V
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS) 35
70 140 280 420 560 700
V
Average Rectified Output Current (Note1) @ TA = 50ºC
Io
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single
Half-sine-wave superimposed on rated load (JEDEC
IFSM
200
A
Method)
Forward Voltage (per element) @ IF=2.0A
VFM
1.1
V
Peak Reverse Current @ TA=25ºC
At Rated DC Blocking Voltage @ TA=100ºC
IRM
10 uA
1.0
Rating for Fusing (t<8.3ms) (Note2)
I2t
64 A2S
Typical Thermal Resistance (Note4)
RθJA
7.5 K/W
Operating and Storage Temperature Range
Typical Junction Capacitance (Note3)
TJ, TSTG
CJ
-55 to +160
110
ºC
pF
Note:
1. Non-repetitive for t>1ms and <8.3ms.
2. Thermal resistance junction to ambient mounted on PC board with 13.0 x 13.0 x 0.03 mm thick land areas.
3. Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
4. Thermal resistance junction to case per element.
“-G” suffix designated RoHS compliant version
Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page1


MP1001-G 데이터시트, 핀배열, 회로
Silicon Bridge Rectifiers
MP1000-G THRU MP1010-G (RoHS Device)
Rating and Characteristic Curve (MP1000-G thru MP1010-G)
10
Resistive or
Inductive load
8
6
4
2
0
25
50 75 100
TA, Ambient Temperature (oC)
125
10
1.0
0.1
Tj = 25 oC
Pulse width = 300uS
0.01
0
0.4 0.8
1.2 1.6
VF, Instantaneous Forward Voltage (V)
240
200
160
120
80
40
0
1.0
Tc = 50oC
Single half sine-wave
JEDEC method
10
Number of Cycles at 60Hz
100
10
Tj =100oC
1.0
0.1
Tj =25oC
0.01
0
40 80 120
Percent of Rated Peak Reverse Voltage (%)
“-G” suffix designated RoHS compliant version
Comchip Technology Corporation . Tel:510-657-8671 . Fax: 510-657-8921 . www.comchiptech.com Page2




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MP1001-G rectifier

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(MP1000-G - MP1010-G) Silicon Bridge Rectifiers - Comchip Technology