CDBHD260-G 반도체 회로 부품 판매점
(CDBHD220-G - CDBHD260-G) Schottky Bridge Rectifiers
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 Comchip Technology |
Schottky Bridge Rectifiers
COMCHIP
SMD DIODE SPECIALIST
CDBHD220-G Thru 260-G
Reverse Voltage: 20 - 60 Volts
Forward Current: 2.0 Amp
Features
• Schottky barrier chips in bridge
• Metal-Semiconductor junction with guard ring
• Highsurge current capability
• Silicon epitaxial planar chips
• For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications
• Lead-free part, meet RoHS requirements
~
+
+~
–~
Mini-DIP
.106(2.7)
.090(2.3)
C .02(0.5)
.043(1.1)
~ .027(0.7)
–
Mechanical Data
• Case: Mini-Dip bridge (TO-269AA) plastic molded case
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: As marked on body
• Mounting Position: Any
• Weight: 0.0078 ounces, 0.22 grams
.031(0.8)
.019(0.5)
.193(4.90)
.177(4.50)
.067(1.7)
.057(1.3)
.016(0.41)
.006(0.15)
.051(1.3)
.035(0.9)
.106(2.7)
.090(2.3)
.114(2.90)
.094(2.40)
.008(0.2)
Max.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
CDBHD - Symbols
220
240
Unit :inch(mm)
260 Units
Maximum Recurrent Peak Reverse Voltage
VRRM
20
40 60 Volts
Maximum RMS Voltage
VRMS
14
28 42 Volts
Maximum DC Blocking Voltage
VDC
20
40 60 Volts
Maximum Average Forward Rectified Current
0.2x0.2” (5.0x5.0mm) copper pad area, see Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod)
Maximum Forward Voltage at 1.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA= 25°C
TA= 100°C
IAV
IFSM
VF
IR
2.0
50.0
0.50
0.5
20.0
Amps
0.70
Amps
Volts
mA
Typical Junction Capacitance (Note 2)
CJ
150 pF
Typical Thermal Resistance (Note 3)
RθJA
RθJL
85.0
20.0
°C/W
Operating Junction Temperature Range
TJ
-55 ~ +125
°C
Storage Temperature Range
TSTG
-55 ~ +150
:
Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.
°C
MDS0703001A
Page 1
Schottky Bridge Rectifiers
COMCHIP
SMD DIODE SPECIALIST
Fig.1 - Forward Current Derating Curve
2.4
2.0
1.6
CDBHD220-G - 260-G
1.2
0.8
0.4
single phase half wave 60Hz
resistive or inductive load
3.75”(9.5mm) lead length
0 25 50 75 100 125 150 175
Lead Temperature ( °C)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
100
10
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
11 10
Number of Cycles at 60 Hz
100
Fig. 3 - Typical Instantaneour Forward
Characteristics
10
CDBHD260-G
CDBHD220-G - 240-G
1.0
Fig. 4A - Typical Reverse Characteristics
100
10 TJ=125°C
TJ=100°C
1.0
TJ=75°C
0.1
0.1
0 0.2 0.4
0.6 0.8
Instantaneous Forward Voltage (Volts)
0.01
TJ=25°C
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
100
10
0.1
TJ=25°C
f=1.0MHz
1.0 10
Reverse Voltage (Volts)
100
MDS0703001A
Page 2
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( comchip )
CDBHD260-G rectifier
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