CDBHD180L-G 반도체 회로 부품 판매점
(CDBHD120L-G - CDBHD1100L-G) Low VF Schottky Bridge Rectifiers
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 Comchip Technology |
Low VF Schottky Bridge Rectifiers
COMCHIP
SMD DIODE SPECIALIST
CDBHD120L-G Thru 1100L-G
Reverse Voltage: 20 - 100 Volts
Forward Current: 1.0 Amp
Features
• Low Vf Schottky barrier chips in bridge
• Metal-Semiconductor junction with guard ring
• High surge current capability
• Silicon epitaxial planar chips
• For use in low voltage, high efficiency inverters, free
wheeling, and polarity protection applications
• Lead-free part, meet RoHS requirements
~
+
+~
–~
Mini-DIP
.106(2.7)
.090(2.3)
C .02(0.5)
.043(1.1)
~ .027(0.7)
–
Mechanical Data
• Case: Mini-Dip bridge (TO-269AA) plastic molded case
• Epoxy: UL94-V0 rated flame retardant
• Terminals: Solderable per MIL-STD-750 Method 2026
• Polarity: As marked on body
• Mounting Position: Any
• Weight: 0.0078 ounces, 0.22 grams
.031(0.8)
.019(0.5)
.193(4.90)
.177(4.50)
.067(1.7)
.057(1.3)
.016(0.41)
.006(0.15)
.051(1.3)
.035(0.9)
.106(2.7)
.090(2.3)
.114(2.90)
.094(2.40)
.008(0.2)
Max.
MAXIMUM RATING AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified
CDBHD - Symbols 120L 140L 160L 180L
Unit :inch(mm)
1100L Units
Maximum Recurrent Peak Reverse Voltage
VRRM 20 40 60 80 100 Volts
Maximum RMS Voltage
VRMS 14 28 42 56
70 Volts
Maximum DC Blocking Voltage
VDC
20 40
60 80
100 Volts
Maximum Average Forward Rectified Current
0.2x0.2” (5.0x5.0mm) copper pad area, see Figure 1
Peak Forward Surge Current
8.3mS single half sine-wave superimp osed on
rated load (JEDEC Me thod)
Maximum Forward Voltage at 1.0A (Note 1)
Maximum DC Reverse Current
at Rated DC Blocking Voltage
TA= 25°C
TA= 100°C
IAV
IFSM
VF
IR
0.44
1.0
30.0
0.625
0.5
20.0
0.75
Amps
Amps
Volts
mA
Typical Junction Capacitance (Note 2)
CJ 250
125 pF
Typical Thermal Resistance (Note 3)
RθJA
RθJL
85.0
20.0
°C/W
Operating Junction Temperature Range
TJ
-55 ~ +125
°C
Storage Temperature Range
TSTG
-55 ~ +150
:
Note 1. Pulse test: 300µS pu lse wi dth, 1% du ty cy cle
2. Me asured at 1.0MH z an d ap plied reverse vo ltage of 4.0 Volts
3. Therma l resistance from junction to am bient and from junction to lead P.C.B. mo unted on 0. 2x0.2”(5.0x5.0mm ) co pper pa d ar eas.
°C
MDS0702004A
Page 1
Low VF Schottky Bridge Rectifiers
COMCHIP
SMD DIODE SPECIALIST
Fig.1 - Forward Current Derating Curve
1.2
1.0
0.8
CDBHD120L-G - 160L-G
0.6
0.4 CDBHD180L-G - 1100L-G
single phase half wave 60Hz
0.2 resistive or inductive load
3.75”(9.5mm) lead length
0 25 50 75 100 125 150 175
Lead Temperature ( °C)
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
100
10
TL=110°C
8.3mS single half sine-wave
(JEDEC Method)
11 10
Number of Cycles at 60 Hz
100
Fig. 3 - Typical Instantaneour Forward
Characteristics
10
pulse width =300µS
1% duty cycle, Tj=25°C
1.0 CDBHD120L-G - 140L-G
0.1 CDBHD160L-G
0.01
0
CDBHD180L-G - 1100L-G
0.2 0.4 0.6 0.8 1.0
Instantaneous Forward Voltage (Volts)
Fig. 4A - Typical Reverse Characteristics
100
CDBHD120L-G - 160L-G
10
TJ=125°C
1.0
TJ=75°C
0.1
0.01
TJ=25°C
0.001
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
1000
TJ=25°C
f=1.0MHz
CDBHD120L-G - 140L-G
100
CDBHD180L-G - 1100L-G
CDBHD160L-G
10
0.1
1.0 10
Reverse Voltage (Volts)
MDS0702004A
100
Fig. 4B - Typeical Reverse Characteristic
1000
CDBHD180L-G - 1100L-G
100
TJ=150°C
TJ=125°C
10
TJ=100°C
1.0
0.1
TJ=25°C
0.01
0
20
40 60
80 100
Percent of Rated Peak Reverse Voltage ( %)
Page 2
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( comchip )
CDBHD180L-G rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
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관련 데이터시트
CDBHD180L-G
(CDBHD120L-G - CDBHD1100L-G) Low VF Schottky Bridge Rectifiers - Comchip Technology
