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International Rectifier |
Bulletin PD-20770 rev. A 08/03
30CTH03
Hyperfast Rectifier
Features
• Hyperfast Recovery Time
• Low Forward Voltage Drop
• Low Leakage Current
• 175°C Operating Junction Temperature
trr = 36ns max.
IF(AV) = 30Amp
VR = 300V
Description/ Applications
International Rectifier's 300V series are the state of the art Hyperfast recovery rectifiers designed with optimized
performance of forward voltage drop and Hyperfast recovery time.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in the output rectification stage of SMPS, UPS, DC-DC converters as well as
freewheeling diodes in low voltage inverters and chopper motor drives.
Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
VRRM
IF(AV)
IFSM
TJ, TSTG
Peak Repetitive Reverse Voltage
Average Rectified Forward Current
@ Tc = 153°C Per Diode
Per Device
Non Repetitive Peak Surge Current @ TJ = 25°C
Operating Junction and Storage Temperatures
Max
300
15
30
150
- 65 to 175
Units
V
A
°C
Case Styles
30CTH03
Base
Common
Cathode
2
www.irf.com
TO-220AB
1
Anode
2
Common
Cathode
3
Anode
1
30CTH03
Bulletin PD-20770 rev. A 08/03
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
VBR, Vr
VF
Breakdown Voltage,
Blocking Voltage
Forward Voltage
IR Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
300 - -
V IR = 100µA
- 1.0 1.25 V
- 0.85 0.95 V
- - 40 µA
- 8 200 µA
- 38 - pF
- 8 - nH
IF = 15A, TJ = 25°C
IF = 15A, TJ = 125°C
VR = VR Rated
TJ = 125°C, VR = VR Rated
VR = 300V
Measured lead to lead 5mm from package body
Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
trr Reverse Recovery Time
IRRM
Peak Recovery Current
Qrr Reverse Recovery Charge
- - 36 ns IF = 1A, diF/dt = 50A/µs, VR = 30V
- - 30
IF = 1A, diF/dt = 100A/µs, VR = 30V
- 33 -
TJ = 25°C
- 48 -
- 2.8 -
- 6.5 -
- 46 -
TJ = 125°C
A TJ = 25°C
TJ = 125°C
nC TJ = 25°C
IF = 15A
diF/dt = 200A/µs
VR = 200V
- 160 -
TJ = 125°C
Thermal - Mechanical Characteristics
TJ
TStg
RthJC
Parameters
Max. Junction Temperature Range
Max. Storage Temperature Range
Thermal Resistance, Junction to Case
Per Diode
Min
-
- 65
-
Typ
-
-
-
Max
175
175
1.4
Units
°C
°C/W
2 www.irf.com
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