SBL30L30CT 반도체 회로 부품 판매점
30A DUAL LOW VF SCHOTTKY BARRIER RECTIFIER
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 Diodes Incorporated |
SPICE MODEL: SBL30L30CT
SBL30L30CT
30A DUAL LOW VF SCHOTTKY BARRIER RECTIFIER
Features
· Low Power Loss, High Efficiency
· Guard Ring for Transient Protection
· High Surge Capability
· Very Low Forward Voltage Drop
· For Use in High Frequency Inverters, Free Wheeling, and
Polarity Protection Applications
· Lead Free Finish, RoHS Compliant (Note 1)
Mechanical Data
· Case: TO-220AB
· Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals: Tin Finish. Solderable per MIL-STD-202,
Method 208 e3
· Polarity: See Diagram
· Marking: Type Number
· Ordering Information: See Sheet 3
· Weight: 2.24 grams (approximate)
B
C
K
D
L
M
A
12 3
E
JN
G
HH
Pin 1
Pin 2
Pin 3
P
Case
TO-220AB
Dim Min Max
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E ¾ 6.35
G 12.70 14.73
H 2.29 2.79
J 0.51 1.14
K 3.53Æ 4.09Æ
L 3.56 4.83
M 1.14 1.40
N 0.30 0.64
P 2.03 2.92
All Dimensions in mm
Maximum Ratings @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @ TC = 140°C
Total Device
Per Element
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
Per Element
Peak Repetitive Reverse Current Per Element at tP = 2ms, 1 KHz
Voltage Rate of Change
Typical Thermal Resistance Junction to Case
(Note 2)
Per Diode
Total
Operating Temperature Range
Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IRRM
dV/dt
RqJC
Tj
TSTG
Value
30
21
30
15
260
1.0
10,000
1.5
0.8
-65 to +150
-65 to +150
Unit
V
V
A
A
A
V/ms
°C/W
°C
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 3)
Forward Voltage Per Element
Peak Reverse Current Per Element (Note 3)
Symbol
V(BR)R
VF
IR
Min Typ Max Unit
Test Condition
30 ¾ ¾ V IR = 1.5mA
¾ ¾ 0.46
@ IF = 15A, Tj = 25°C
¾
¾
¾
0.52
0.38
0.57
V
@ IF = 15A, Tj = 125°C
@ IF = 30A, Tj = 25°C
¾ ¾ 0.50
@ IF = 30A, Tj = 125°C
¾ ¾ 1.0 mA @ VR = 30V, Tj = 25°C
¾ ¾ 300 mA @ VR = 30V, Tj = 125°C
Notes:
1. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex, Notes 5 and 7.
2. Thermal Resistance Junction to Case: Device mounted on 200x200x5mm aluminum plate.
3. Short duration test pulse used to minimize self-heating effect.
DS30757 Rev. 5 - 2
1 of 3
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SBL30L30CT
ã Diodes Incorporated
40
30
Total Device
20
Per Element
10
T
0
25
100,000
50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
175
10,000
TA = 150ºC
1000 TA = 125ºC
100
TA = 85ºC
TA = 25ºC
TA = -40ºC
10
TA = -65ºC
1
0 0.1 0.2 0.3 0.4 0.5 0.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 3 Typical Forward Characteristics, Per Element
10,000
f = 1MHz
300
250
8.3 ms single half-sine-wave
200
150
100
50
0
12
5 10 20
50 100
NUMBER OF CYCLES AT 60Hz
Fig. 2 Maximum Non-Repetitive Surge Current, Per Element
1
TA = 150ºC
0.1
10m
1m
TA = 125ºC
TA = 85ºC
TA = 25ºC
TA = -40ºC
TA = -65ºC
0 5 10 15 20 25 30
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Fig. 4 Typical Reverse Characteristics, Per Element
1000
100
0
5 10 15 20 25 30
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Total Capacitance, Per Element
DS30757 Rev. 5 - 2
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SBL30L30CT
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SBL30L30CT rectifier
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