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HIGH VOLTAGE 50 mA
SILICON RECTIFIERS
VT RVT
SMALL SIZE MOLDED PACKAGE
PRV 10,000 TO 15,000 VOLTS
FAST RECOVERY (R_SERIES)
AVALANCHE CHARACTERISTICS
LOW LEAKAGE
EDI
Type
PRV
Volts
REVERSE RECOVERY TIME
(Fig.4)
VT1000
VT1200
VT1500
RVT1000
RVT1200
RVT1500
10,000
12,000
15,000
10,000
12,000
15,000
-
-
-
100 ns max.
100 ns max.
100 ns max.
ELECTRICAL CHARACTERISTDIaCtaSSh(eaett4TUA.c=o2m5 oC Unless Otherwise Specified)
Average Rectified Forward Current @ 50oC, IO
Max. Peak Surge Current, IFSM (8.3ms)
Max. Forward Voltage Drop @ 50 mA, VF
Max. DC Reverse Current @ PRV and 25oC, IR
Max. DC Reverse Current @ PRV and100oC, IR
Ambient Operating Temperature Range, TA
Storage Temperature Range, TSTG
50 mA
5 Amp
28Volts
1A
25 A
-55 to + 125oC
-55 to + 150oC
DataShee
NOTES:
1.It is recommended that a proper heat sink be used on the terminals of this device between the body and
soldering point to prevent damage from excess heat.
2.If operated over 10,000v/inch in length, devices should be immersed in oil or re - encapsulated.
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EDI reservesthe rightto changethese specificationsat any time withoutnotice.
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FIG.1
OUTPUT CURRENT vs AMBIENT TEMPERATURE
100
75
50
25
0
0
25 50
75 100 125
AMBIENT TEMPERATURE (OC)
150
VT RVT
FIG.2
NON- REPETITIVE SURGE CURRENT
0.1SEC
1.0SEC
100
75
50
25
0
1
2 3 4 5 6 7 8 9 10
20 30 40 50 60
CYCLES(60 Hz)
FIG.3
et4U.com
MECHANICAL
Leads-solid silver
Markings-Cathode band
and device type
A LEAD DIA.
DataSheet4U.com
C
B MIN.
D
FIG.4
REVERSE RECOVERY TEST METHOD
INCHES
A 0.02
B 0.60
C 0.50
D 0.16
MM
0.5
15.2
12.7
4.0
RECOVERY WAVE FORM
Trr
I F=2MA
I R=5MA
I RR=1MA
-
RECOVERY WA VE FORM
1000
NI
0.1
D.U.T.
PULSE
GENERATOR
50
NI
SCOPE
WAVE FORMS
CIRCUIT
ELECTRONIC DEVICES, INC. DESIGNERS AND MANUFACTURERS OF SOLID STATE DEVICES SINCE 1951.
21 GRAY OAKS AVENUE * YONKERS. NEW YORK 10710 914-965-4400 * FAX 914-965-5531 * 1-800-678-0828
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