STTH506TTI 반도체 회로 부품 판매점
Tandem 600V HYPERFAST RECTIFIER
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 ST Microelectronics |
® STTH506TTI
Tandem 600V HYPERFAST RECTIFIER
MAJOR PRODUCTS CHARACTERISTICS
IF(AV)
5A
VRRM
600 V (in series)
Tj (max)
150 °C
VF (max)
2.6 V
IRM (typ.)
3.6 A
FEATURES AND BENEFITS
■ ESPECIALLY SUITED AS BOOST DIODE IN
CONTINUOUS MODE POWER FACTOR
CORRECTORS AND HARD SWITCHING
CONDITIONS
■ DESIGNED FOR HIGH dIF/dt OPERATION.
HYPERFAST RECOVERY CURRENT TO
COMPETE WITH SiC DEVICES. ALLOWS
DOWNSIZING OF MOSFET AND HEATSINKS
■ INTERNAL CERAMIC INSULATED DEVICES
WITH EQUAL THERMAL CONDITIONS FOR
BOTH 300V DIODES
■ INSULATION
(2500VRMS)
ALLOWS
PLACEMENT ON SAME HEATSINK AS
MOSFET FLEXIBLE HEATSINKING ON
COMMON OR SEPARATE HEATSINK.
■ MATCHED DIODES FOR TYPICAL PFC
APPLICATION WITHOUT NEED FOR
VOLTAGE BALANCE NETWORK
■ Package Capacitance: C=7pF
12 3
123
Insulated TO-220AB
DESCRIPTION
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300V dice in
series. TURBOSWITCH “H” family drastically cuts
losses in the associated MOSFET when run at
high dIF/dt.
ABSOLUTE RATINGS (limiting values, for both diodes)
Symbol
VRRM
IF(RMS)
IFSM
Tstg
Tj
Parameter
Repetitive peak reverse voltage
RMS forward current
Surge non repetitive forward current tp = 10 ms sinusoidal
Storage temperature range
Maximum operating junction temperature
Value
600
14
60
-65 +150
+ 150
Unit
V
A
A
°C
°C
TM: TURBOSWITCH is a trademark of STMicroelectronics
June 2003 - Ed: 1A
1/5
STTH506TTI
THERMAL AND POWER DATA
Symbol
Rth (j-c)
P
Parameter
Junction to case thermal resistance
Conduction power dissipation for
both diodes
Test conditions
Total
IF(AV) = 5 A δ = 0.5
Tc = 100°C
Value
3.0
17
Unit
°C/W
W
STATIC ELECTRICAL CHARACTERISTICS (for both diodes)
Symbol
Parameter
Tests Conditions
IR * Reverse leakage current VR = VRRM Tj = 25°C
Tj = 125°C
VF ** Forward voltage drop
IF = 5 A
Tj = 25°C
Tj = 125°C
Min.
Typ.
8
2.1
Max.
6
60
3.6
2.6
Pulse test : * tp = 100 ms, δ < 2 %
** tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation :
P = 1.8 x IF(AV) + 0.16 IF2(RMS)
Unit
µA
V
DYNAMIC CHARACTERISTICS (for both diodes)
Symbol Parameter
trr Reverse recovery
time
IRM Reverse recovery
current
S Reverse recovery
softness factor
Tests Conditions
IF = 0.5 A
IR = 1 A
Irr = 0.25 A Tj = 25°C
IF = 1 A dIF/dt = - 50 A/µs
VR = 30 V
VR = 400 V IF = 5 A
dIF/dt = -200 A/µs
Tj = 125°C
Min.
Typ.
12
3.8
0.4
Max.
25
4.5
Unit
ns
A
-
TURN-ON SWITCHING CHARACTERISTICS (for both diodes)
Symbol Parameter
tfr Forward recovery
time
VFP Transient peak
forward recovery
voltage
Tests Conditions
IF = 5 A dIF/dt = 100 A/µs Tj = 25°C
VFR = 1.1 x VF max
IF = 5 A dIF/dt = 100 A/µs Tj = 25°C
Min. Typ. Max. Unit
100 ns
7V
2/5
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STTH506TTI rectifier
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