MBR330 반도체 회로 부품 판매점
Axial Lead Rectifiers
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 Motorola Semiconductors |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBR320/D
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features epitaxial construction with
oxide passivation and metal overlap contact. Ideally suited for use as rectifiers
in low–voltage, high–frequency inverters, free wheeling diodes, and polarity
protection diodes.
• Extremely Low vF
• Low Power Loss/High Efficiency
• Highly Stable Oxide Passivated Junction
• Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
• Polarity: Cathode indicated by Polarity Band
• Marking: B320, B330, B340, B350, B360
MAXIMUM RATINGS
MBR320
MBR330
MBR340
MBR350
MBR360
MBR340 and MBR360 are
Motorola Preferred Devices
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40, 50, 60 VOLTS
CASE 267–03
PLASTIC
Rating
Symbol MBR320 MBR330 MBR340 MBR350 MBR360 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current, TA = 65°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 3)
Non–Repetitive Peak Surge Current (2)
(Surge applied at rated load conditions, half wave,
single phase 60 Hz, TL = 75°C)
Operating and Storage Junction
Temperature Range (Reverse Voltage applied)
VRRM
VRWM
VR
IO
IFSM
20
TJ, Tstg
30 40 50
3.0
80
*65 to 150°C
60 V
A
A
°C
Peak Operating Junction Temperature
TJ(pk)
150
°C
(Forward Current applied)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient (see Note 3, Mounting Method 3)
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol MBR320
MBR330
RθJA
28 °C/W
MBR340 MBR350 MBR360 Unit
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
vF
Maximum Instantaneous Reverse Current @ Rated dc
Voltage (1)
TL = 25°C
TL = 100°C
iR
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
Preferred devices are Motorola recommended choices for future use and best overall value.
0.500
0.600
0.850
0.60
20
0.600
0.740
1.080
V
mA
Rev 1
©RMeoctotriofilea,rInDce. 1v9ic96e Data
1
MBR320 MBR330 MBR340 MBR350 MBR360
MBR320, 330 AND 340
20
10
7.0
5.0
3.0
2.0 TJ = 150°C
1.0
0.7
0.5
0.3
0.2
25°C
100°C
100
40
20 150°C
10
4.0
2.0
1.0
100°C
1000
0.4
0.2 75°C
0.1 100
0.04
0.02
0.01
0.004
0.002
0.001
0
10
25°C
10
10 20 30 40
VR REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selec-
tions can be estimated from these same curves if VR is sufficiently
below rated VR.
10
0.1
0.07
0.05
0.03
0.02
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
2.5
SQUARE
dc
WAVE
2.0 RESISTIVE LOAD
+IPK
(CAPACITIVE LOAD) IAV
p
+1.5
I
PK
IAV
5.0
1.0 10
20
TJ = 150°C
0.5
0 1.0 2.0 3.0 4.0 5.0
IF (AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 4. Power Dissipation
8.0
6.0
4.0
2.0 SQUARE
WAVE
dc
0
20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (C°)
Figure 3. Current Derating
(Mounting method #3 per note 1)
500
400
TJ = 25°C
300
200
100 100
90
80
70
60
50
0 10 20 30 40 50
VR REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
2 Rectifier Device Data
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MBR330 rectifier
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