NTE5569 반도체 회로 부품 판매점
Silicon Controlled Rectifier (SCR) for Phase Control Applications
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 NTE |
NTE5567, NTE5568, NTE5569, & NTE5571
Silicon Controlled Rectifier (SCR)
for Phase Control Applications
Features:
D High Current Rating
D Excellent Dynamic Characteristics
D Superior Surge Capabilities
D Standard Package
Voltage Ratings and Electrical Characteristics: (TJ = +125°C unless otherwise specified)
Maximum Repetitive Peak Forward and Reverse Voltage (Note 1), VDRM, VRRM
NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5568 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1600V
Maximum Non–Repetitive Peak Voltage (Note 2), VRSM
NTE5567 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5568 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V
Maximum Peak Reverse and Off–State Current, IDRM, IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Maximum Average On–State Current (180° Sinusoidal Conduction), IT(RMS)
NTE5567, NTE5568, NTE5569 (TC = +94°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
NTE5571 (TC = +90°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A
Maximum RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A
Maximum Peak One–Cycle Non–Repetitive Surge Current (t = 10ms, Sinusoidal Half Wave), ITSM
(No Voltage Reapplied)
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1430A
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200A
(100% VRRM Reapplied)
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200A
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1010A
Maximum I2t for Fusing (t = 10ms, Sinusoidal Half Wave), I2t
(No Voltage Reapplied)
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.18KA2s
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.21KA2s
(100% VRRM Reapplied)
NTE5567, NTE5568, NTE5569
........................................
7.20KA2s
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.10KA2s
Voltage Ratings and Electrical Characteristics (Cont’d): (TJ = +125°C unless otherwise specified)
Maximum I2√t for Fusing (t = 0.1 to 10ms, No Voltage Reapplied), I2√t
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101.8KA2√s
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.1KA2√s
Low Level Value of Threshold Voltage (16.7% x π x IT(AV) < I < π x IT(AV)), VT(TO)1
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.94V
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.02V
High Level Value of Threshold Voltage (π x IT(AV) < I < 20 x π x IT(AV)), VT(TO)2
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.08V
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.17V
Low Level Value of On–State Slope Resistance (16.7% x π x IT(AV) < I < π x IT(AV)), rt1
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.08mΩ
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.78mΩ
High Level Value of On–State Slope Resistance (π x IT(AV) < I < 20 x π x IT(AV)), VT(TO)2
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.34mΩ
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.97mΩ
Maximum On–State Voltage (Ipk = 157A, TJ = +25°C), VTM
NTE5567, NTE5568, NTE5569 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.60V
NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.78V
Maximum Holding Current (TJ = +25°C, Anode Supply 22V, Resistive Load, Initial IT = 2A), IH . 200mA
Latching Current (Anode Supply 6V, Resistive Load), IL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mA
Maximum Rate of Rise of Turned–On Current, di/dt
(VDM = Rated VDRM, Gate Pulse = 20V, 15Ω, tp = 6µs, tr = 0.1µs ax., ITM = (2x Rated di/dt) A)
NTE5567, NTE5568 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A/µs
NTE5569, NTE5571 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Typical Delay Time, td . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.9µs
(TC = +25°C, VDM = Rated VDRM, DC Resistive Circuit, Gate Pulse = 10V, 15Ω Source, tp = 20µs)
Typical Turn–Off Time, tq . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110µs
(TC = +125°C, ITM = 50A, Reapplied dv/dt = 20Vµs, dir/dt = –10A/µs, VR = 50V)
Maximum Critical Rate of Rise of Off–State Voltage, dv/dt
(Linear to 100% rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V/µs
(Linear to 67% rated VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V/µs
Maximum Peak Gate Power (tp ≤ 5ms), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Maximum Average Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5W
Maximum Peak Positive Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A
Maximum Peak Positive Gate Voltage, +VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Maximum Peak Negative Gate Voltage, –VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
DC Gate Current Required to Trigger (6V Anode–to–Cathode Applied), IGT . . . . . . . . . . . . . . 50mA
DC Gate Voltage Required to Trigger (6V Anode–to–Cathode Applied, TJ = +25°C), VGT . . . 2.5V
DC Gate Current Not to Trigger (Rated VDRM Anode–to–Cathode Applied), IGD . . . . . . . . . . 5.0mA
DC Gate Voltage Not to Trigger (Rated VDRM Anode–to–Cathode Applied), VGD . . . . . . . . . . 0.2V
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Thermal Resistance
Junction–to–Case (DC Operation), RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.35K/W
Case–to–Heatsink (Mounting Surface Smooth, Flat, and Greased), RthCS . . . . . . . 0.25K/W
Mounting Torque (Non–Lubricated Threads), T . . . . . . . . . . . . . . . . . . 25 – 30 (2.8 – 3.4) lbf–in (Nm)
Note 1. Units may be broken over non–repetitively in the off–state direction without damage, if di/dt
does not exceed 20A/µs.
Note 2. For voltage pulses with tp ≤ 5ms.
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PDF 파일 내의 페이지 : 총 3 페이지
제조업체: NTE
( nte )
NTE5569 rectifier
데이터시트 다운로드 :
[ NTE5569.PDF ]
[ NTE5569 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
NTE5562
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NTE5566
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NTE5567
Silicon Controlled Rectifier (SCR) for Phase Control Applications - NTE
NTE5568
Silicon Controlled Rectifier (SCR) for Phase Control Applications - NTE
NTE5569
Silicon Controlled Rectifier (SCR) for Phase Control Applications - NTE