NTE5476 반도체 회로 부품 판매점
Silicon Controlled Rectifier (SCR) 5 Amp
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 NTE |
NTE5470 thru 5476
Silicon Controlled Rectifier (SCR)
5 Amp
Description:
The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type
stud mount package suitable for industrial and consumer applications.
Features:
D Uniform Low–Level Noise–Immune Gate Triggering
D Low Forward “ON” Voltage
D High Surge–Current Capability
Absolute Maximum Ratings: (Apply over operating temperature range unless otherwise specified)
Peak Repetitive Forward and Reverse Blocking Voltage (Note 1), VDRM, VRRM
NTE5470 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
NTE5471 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
NTE5472 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5473 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
NTE5474 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5475 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V
NTE5476 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Forward Current RMS, ITRMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A
Peak Forward Surge Current (One Cycle, 60Hz, TJ = –40° to +100°C), ITSM . . . . . . . . . . . . . . 100A
Circuit Fusing (TJ = –40° to +100°C, t ≤ 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A2sec
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage (Note 2), VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10V
Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +100°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Stud Torque . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 in. lb.
Note 1. Ratings apply for zero or negative gate voltage. Devices should not be tested for blocking
capability in a manner such that the voltage applied exceeds the rated blocking voltage.
Note 2. Devices should not be operated with a positive bias applied to the gate concurrently with a
negative potential applied to the anode.
Electrical Characteristics: (TC = +25°C unles otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Peak Forward or Reverse Blocking Current
Gate Trigger Current, Continuous DC
Gate Trigger Voltage, Continuous DC
Forward “ON” Voltage
Holding Current
Turn–On Time (td + tr)
Turn–Off Time
IDRM,
IRRM
IGT
VGT
vTM
IH
ton
toff
Rated VDRM or VRRM, TJ = +25°C
Gate Open
TJ = +100°C
VD = 7V, RL = 100Ω,
Note 3
TC = –40°C
VD = 7V, RL = 100Ω
TC = –40°C
TJ = +100°C
ITM = 15.7A, Note 4
VD = 7V, Gate Open
TC = –40°C
IG = 20mA, IF = 5A, VD = Rated VDRM
IF = 5A, IR = 5A,
VD = Rated VDRM,
dv/dt = 30V/µs
TJ = +100°C
– – 10
––2
– 10 30
– – 60
– 0.75 1.5
– – 2.5
0.2 – –
– 1.4 2.0
– 10 30
– – 60
–1–
– 15 –
– 25 –
µA
mA
mA
mA
V
V
V
V
mA
mA
µs
µs
µs
Forward Voltage Application Rate
(Exponential)
dv/dt Gate Open, TJ = +100°C,
VD = Rated VDRM
– 50 – V/µs
Note 3. For optimum operation, i.e. faster turn–on, lower switching losses, best di/dt capability,
recommended IGT = 200mA minimum.
Note 4. Pulsed, 1ms Max, Duty Cycle ≤ 1%.
.431
(10.98
Max
Gate
Cathode
.855
(21.7)
Max
.453
(111.5)
Max
.125 (3.17) Max
Anode
10–32 UNF–2A
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NTE5476 rectifier
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[ NTE5476.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
NTE5470
Silicon Controlled Rectifier (SCR) 5 Amp - NTE
NTE5476
Silicon Controlled Rectifier (SCR) 5 Amp - NTE