NTE5427 반도체 회로 부품 판매점
Silicon Controlled Rectifier (SCR) 7 Amp
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 NTE |
NTE5427 thru NTE5429
Silicon Controlled Rectifier (SCR)
7 Amp
Absolute Maximum Ratings:
Repetitive Peak Reverse Voltage (TC = +110°C), VRRM
NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Off–State Voltage (TC = +110°C), VDRM
NTE5427 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
NTE5428 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5429 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +80°C, Conduction Angle of 180°), IT(RMS) . . . . . . . . . . . . . . . . . . . 7A
Peak Surge (Non–Repetitive) On–State Current (One Cycle at 50 or 60Hz), ITSM . . . . . . . . . . . 80A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Peak Gate–Power Dissipation (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +110°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5°C/W
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Peak Off–State Current
Maximum On–State Voltage
DC Holding Current
DC Gate–Trigger Current
DC Gate–Trigger Voltage
Gate Controlled Turn–On Time
I2t for Fusing Reference
IRRM
IDRM
VTM
IHOLD
IGT
VGT
tgt
I2t
VRRM = Max, VDRM = Max,
TC = +110°C, RGK = 1kΩ
IT = 7A
VD = 6VDC, RL = 100Ω
VD = 6VDC, RL = 100Ω
IG x 3GT
For SCR Protection
Critical Rate of Off–State Voltage dv/dt Gate Open, TC = +100°C
(critical)
Min Typ Max Unit
– – 1 mA
– – 1 mA
––2
V
– – 50 mA
– – 25 mA
– – 1.5 V
– 2 – µs
– – 2.6 A2sec
– 100 – V/µs
.250
(6.35)
Max
1.500
(38.1)
Min
.352 (8.95) Dia Max
.325 (8.13) Dia Max
Cathode
45°
.019 (0.5)
Gate
Anode
.031 (.793)
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: NTE
( nte )
NTE5427 rectifier
데이터시트 다운로드 :
[ NTE5427.PDF ]
[ NTE5427 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
NTE5424
Silicon Controlled Rectifier (SCR) for TV Power Supply Switching - NTE
NTE5426
Silicon Controlled Rectifier (SCR) Sensitive Gate - NTE
NTE5427
Silicon Controlled Rectifier (SCR) 7 Amp - NTE
NTE5429
Silicon Controlled Rectifier (SCR) 7 Amp - NTE