NTE5368 반도체 회로 부품 판매점
Silicon Controlled Rectifier (SCR) 125 Amp
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 NTE |
NTE5368 & NTE5369
Silicon Controlled Rectifier (SCR)
125 Amp
Absolute Maximum Ratings: (TJ = +125°C unless otherwise specified)
Repetitive Peak Voltages, VRRM, VDRM, VDSM
NTE5368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE5369 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
Non–Repetitive Peak Reverse Blocking Voltage, VRSM
NTE5368 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
NTE5369 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1300V
Average On–State Current (Half Sine Wave, TC = +85°C), IT(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . 75A
RMS On–State Current, IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175A
Continuous On–State Current, IT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175A
Peak One–Cycle Surge (10ms duration, 60% VRRM re–applied), ITSM (1) . . . . . . . . . . . . . . . . 1500A
Non–Repetitive On–State Current (10ms duration, VR ≤ 10V), ITSM (2) . . . . . . . . . . . . . . . . . . . 1650A
Maximum Permissible
10ms duration
Surge
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Energy
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(VR ≤
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10V), I2t
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13600A2s
3ms duration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10000A2s
Peak Forward Gate Current (Anode positive with respect to cathode), IFGM . . . . . . . . . . . . . . . . 14A
Peak Forward Gate Voltage (Anode positive with respect to cathode), VFGM . . . . . . . . . . . . . . . 20V
Peak Reverse Gate Voltage, VRGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Average Gate Power, PG . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W
Peak Gate Power (100µs pulse width), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W
Rate of Rise of Off–State Voltage (To 80% VDRM gate open–circuit), dv/dt . . . . . . . . . . . . . 200V/µs
Rate of Rise of On–State Current, di/dt
(Gate drive 20V, 20Ω with tr ≤ 1µs, anode voltage ≤ 80% VDRM)
Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500A/µs
Non–Repetitive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000A/µs
Operating Temperature Range, Ths . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Case, RthJC
(For a device with a maximum forward voltage drop characteristic) . . . . . . . . . . . . 0.23°C/W
Absolute Maximum Ratings (Cont’d): (TJ = +125°C unless otherwise specified)
Peak On–State Voltage (ITM = 280A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.54V
Forward Conduction Threshold Voltage, VO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7V
Forward Conduction Slope Resistance, r . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3mΩ
Repetitive Peak Off–State Current (At VDRM), IDRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Repetitive Peak Reverse Current (At VRRM), IRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Maximum Gate Current (VA = 6V, IA = 1A, TJ = +25°C), IGT . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Maximum Gate Voltage (VA = 6V, IA = 1A, TJ = +25°C), VGT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3V
Maximum Holding Current (VA = 6V, IA = 1A, TJ = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Maximum Gate Voltage Which Will Not Trigger Any Device, VGD . . . . . . . . . . . . . . . . . . . . . . . 0.25V
Typical Stored Charge (ITM = 200A, drR/dt = 10A/µs, VRM = 50V, 50% chord value), Qrr . . . . 25µC
Circuit Commutated Turn–Off Time (ITM = 200A, diR/dt = 10A/µs, VRM = 50V), tq
(200V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25–40µs
(20V/µs to 80% VDRM) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (typical) 20–35µs
1.227 (31.18) Dia
(Across Corners)
.280 (7.11)
.260 (6.6) Dia Max
.650 (16.51) Max
Cathode
1.810
(45.97)
Max
.415 (10.55)
.812
(20.6)
Anode
Gate
1.031 (26.18) Dia Max
.500 (12.7) Max
1/2–20 UNF
(Terminal 3)
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: NTE
( nte )
NTE5368 rectifier
데이터시트 다운로드 :
[ NTE5368.PDF ]
[ NTE5368 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
NTE5368
Silicon Controlled Rectifier (SCR) 125 Amp - NTE
NTE5369
Silicon Controlled Rectifier (SCR) 125 Amp - NTE