MBR890L 반도체 회로 부품 판매점
8.0A SCHOTTKY BARRIER RECTIFIER
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 Diodes Incorporated |
MBR870L - MBR8100L
8.0A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: See Diagram
· Weight: 2.24 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
C
K
B
D
L
M
A
12
E
JN
G
R
Pin 1
Pin 2
P
Case
TO-220AC
Dim Min Max
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E ¾ 6.35
G 12.70 14.73
J 0.51 1.14
K 3.53Æ 4.09Æ
L 3.56 4.83
M 1.14 1.40
N 0.30 0.64
P 2.03 2.92
R 4.83 5.33
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ TC = 125°C
Non-Repetitive Peak Forward Surge Current,
8.3ms single half sine-wave superimposed on rated load
(JEDEC Method)
Repetitive Peak Forward Surge Current
@ t £ 5.0ms
Forward Voltage Drop
@ IF = 8.0A, TC = 25°C
@ IF = 8.0A, TC = 125°C
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
IFRM
VFM
IRM
Cj
RqJC
dV/dt
Tj, TSTG
MBR
870L
70
49
MBR
880L
MBR
890L
80 90
56 63
8.0
230
850
0.72
0.58
0.55
7.0
350
2.0
10,000
-55 to +175
MBR
8100L
100
70
Unit
V
V
A
A
A
V
mA
pF
K/W
V/ms
°C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
DS30029 Rev. B-4
1 of 2
MBR870L-MBR8100L
10
8
6
4
2
0
0
50 100
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
150
300
250
200
150
100
50
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
100
10
1.0
0.1
0
0.2 0.4
Tj - 25°C
IF Pulse Width = 300µs
2% Duty Cycle
0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
4000
Tj = 25°C
f = 1.0MHz
1000
100
0.1
1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
DS30029 Rev. B-4
2 of 2
MBR870L-MBR8100L
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제조업체: Diodes Incorporated
( diodes )
MBR890L rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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