MBR3035PT 반도체 회로 부품 판매점
30A SCHOTTKY BARRIER RECTIFIER
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 Diodes Incorporated |
MBR3030PT - MBR3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Marking: Type Number
· Weight: 5.6 grams (approx.)
· Mounting Position: Any
H
S
R
P*
*2 Places
N
Q
MM
J
K
L
G
A
B
C
D
E
TO-3P
Dim Min
Max
A 3.20 3.50
B 4.59 5.16
C 20.80 21.30
D 19.70 20.20
E 2.10 2.40
G 0.51 0.76
H 15.90 16.40
J 1.70 2.70
K 3.10Æ 3.30Æ
L 3.50 4.51
M 5.20 5.70
N 1.12 1.22
P 1.93 2.18
Q 2.97 3.22
R 11.70 12.80
S 4.30 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TC = 125°C
(Note 1)
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage Drop
per element (Note 3)
@ IF = 20A, TC = 25°C
@ IF = 20A, TC = 125°C
Peak Reverse Current
@ TC = 25°C
at Rated DC Blocking Voltage, per element @ TC = 125°C
Typical Junction Capacitance
(Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Voltage Rate of Change (Rated VR)
Operating and Storage Temperature Range
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
VFM
IRM
Cj
RqJc
dV/dt
Tj, TSTG
MBR
3030PT
30
21
MBR MBR MBR
3035PT 3040PT 3045PT
35 40 45
24.5
28 31.5
30
200
0.65
0.60
1.0
60
1.4
700
10,000
-65 to +150
MBR MBR
3050PT 3060PT
50 60
35 42
0.75
0.65
5.0
100
2.0
Unit
V
V
A
A
V
mA
pF
K/W
V/µs
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Pulse width £300 ms, duty cycle £2%.
DS23017 Rev. E-2
1 of 2
MBR3030PT - MBR3060PT
30 100
24
MBR 3030PT - MBR 3045PT
10
18
12
6
0
0
300
250
200
150
50 100
TC, CASE TEMPERATURE (°C)
Fig. 1 Fwd Current Derating Curve
150
Tj = 25°C
8.3ms Single half-wave
JEDEC Method
100
50
0
1
10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Max Non-Repetitive Surge Current
100
MBR 3050PT - MBR 3060PT
1.0
0.1
0
Tj = 25°C
Pulse width = 300µs
2% duty cycle
0.2 0.4 0.6 0.8
VF, INSTANTANEOUS F0RWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
4000
Tj = 25°C
f = 1MHz
1000
100
0.1
1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
Tj = 125°C
10
DS23017 Rev. E-2
1.0 Tj = 75°C
0.1
Tj = 25°C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typical Reverse Characteristics
2 of 2
MBR3030PT - MBR3060PT
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Diodes Incorporated
( diodes )
MBR3035PT rectifier
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[ MBR3035PT.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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