MBR2560CT 반도체 회로 부품 판매점
30A SCHOTTKY BARRIER RECTIFIER
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 Diodes Incorporated |
MBR2535CT - MBR2560CT
30A SCHOTTKY BARRIER RECTIFIER
Features
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: As Marked on Body
· Weight: 2.24 grams (approx.)
· Mounting Position: Any
· Marking: Type Number
C
K
B
D
L
M
A
12 3
E
JN
G
HH
Pin 1 +
Pin 2 -
Pin 3 +
P
+
Case
TO-220AB
Dim Min Max
A 14.22 15.88
B 9.65 10.67
C 2.54 3.43
D 5.84 6.86
E ¾ 6.35
G 12.70 14.73
H 2.29 2.79
J 0.51 1.14
K 3.53Æ 4.09Æ
L 3.56 4.83
M 1.14 1.40
N 0.30 0.64
P 2.03 2.92
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol MBR2535CT MBR2545CT MBR2550CT MBR2560CT Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
35
45
50
60 V
VR
RMS Reverse Voltage
VR(RMS)
25
32
35
42 V
Average Rectified Output Current
@ TC = 130°C IO
30 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
150
A
(JEDEC Method)
Peak Repetitive Reverse Surge Current (Note 3)
IRRM
1.0
0.5 A
Forward Voltage Drop
@ IF = 15.0A, TC = 25°C
@ IF = 15.0A, TC = 125°C
@ IF = 30.0A, TC = 25°C
@ IF = 30.0A, TC = 125°C
VFM
¾
¾
0.82
0.73
0.75
0.65
¾
¾
V
Peak Reverse Current
at Rated DC Blocking Voltage
@ TC = 25°C
@ TC = 125°C
IRM
0.2
40
1.0
50
mA
Typical Junction Capacitance (Note 2)
Cj 750
500 pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
1.5 °C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
3. 2.0ms pulse width, f = 1.0KHz.
DS31036 Rev. D-2
1 of 2
MBR2535CT - MBR2560CT
30
24
18
12
6
0
0
150
50 100
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
150
8.3 ms single half-sine-wave
JEDEC method
100
50
50
Tj = 25°C
IF Pulse Width = 300µs
10
Tj = 150°C
1.0
Tj = 25°C
0.1
MBR2535CT & MBR2545CT
MBR2550CT & MBR2560CT
0.01
0.2 0.4 0.6 0.8 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
10000
Tj = 25°C
f = 1.0MHz
1000
0
1 10 100
NUMBER OF CYCLES AT 60Hz
Fig. 3 Maximum Non-Repetitive Surge Current
100
0.1
MBR2535CT & MBR2545CT
MBR2550CT & MBR2560CT
1.0 10
VR, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
100
DS31036 Rev. D-2
2 of 2
MBR2535CT - MBR2560CT
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PDF 파일 내의 페이지 : 총 2 페이지
제조업체: Diodes Incorporated
( diodes )
MBR2560CT rectifier
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[ MBR2560CT.PDF ]
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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