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30BQ040TRPbF 반도체 회로 부품 판매점

Schottky Rectifier ( Diode )



International Rectifier 로고
International Rectifier
30BQ040TRPbF 데이터시트, 핀배열, 회로
Bulletin PD-2.439 rev. G 07/04
SCHOTTKY RECTIFIER
30BQ040
3 Amp
IF(AV) = 3.0Amp
VR = 40V
Major Ratings and Characteristics
Characteristics
IF(AV)
Rectangular
waveform
VRRM
30BQ040 Units
3.0 A
40 V
IFSM @ t p= 5 µs sine
2000
VF @3.0 Apk, TJ = 125°C
0.43
TJ range
- 55 to 150
A
V
°C
Description/ Features
The 30BQ040 surface-mount Schottky rectifier has been de-
signed for applications requiring low forward drop and small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes,
battery charging, and reverse battery protection.
Small foot print, surface mountable
Very low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Case Styles
30BQ040
www.irf.com
SMC
1


30BQ040TRPbF 데이터시트, 핀배열, 회로
30BQ040
Bulletin PD-2.439 rev. G 07/04
Voltage Ratings
Part number
VR Max. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V)
Absolute Maximum Ratings
30BQ040
40
Parameters
IF(AV) Max. Average Forward Current
IFSM Max. Peak One Cycle Non-Repetitive
Surge Current
EAS Non Repetitive Avalanche Energy
IAR Repetitive Avalanche Current
30BQ
3.0
4.0
2000
110
6.0
1.0
Units Conditions
A 50% duty cycle @ TL = 118 °C, rectangular wave form
50% duty cycle @ TL= 110 °C, rectangular wave form
A 5µs Sine or 3µs Rect. pulse Following any rated
load condition and
10ms Sine or 6ms Rect. pulse with rated VRRM applied
mJ TJ = 25 °C, IAS = 1.0A, L = 12mH
A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Electrical Specifications
Parameters
30BQ Units Conditions
VFM Max. Forward Voltage Drop (1)
IRM Max. Reverse Leakage Current (1)
CT Max. Junction Capacitance
LS Typical Series Inductance
dv/dt Max. Voltage Rate of Change
(1) Pulse Width < 300µs, Duty Cycle < 2%
0.53
0.68
0.43
0.57
0.5
30
230
3.0
10000
V @ 3A
V @ 6A
V @ 3A
V @ 6A
TJ = 25 °C
TJ = 125 °C
mA TJ = 25 °C
mA TJ = 125 °C
VR = rated VR
pF VR = 5VDC (test signal range 100KHz to 1Mhz) 25°C
nH Measured lead to lead 5mm from package body
V/µs (Rated VR)
Thermal-Mechanical Specifications
Parameters
30BQ Units
Conditions
TJ Max. Junction Temperature Range (*) - 55 to 150 °C
Tstg Max. Storage Temperature Range - 55 to 150 °C
RthJL
Max. Thermal Resistance
Junction to Lead
(**)
12
°C/W
RthJA Max. Thermal Resistance
Junction to Ambient
46 °C/W
DC operation
DC operation
wt Approximate Weight
0.24 (0.008) g (oz.)
Case Style
SMC
Similar to DO-214AB
Device Marking
IR3F
(*) dPtot < 1
thermal runaway condition for a diode on its own heatsink
dTj Rth( j-a)
(**) Mounted 1 inch square PCB
2
www.irf.com




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Schottky Rectifier ( Diode ) - International Rectifier