BR1506W 반도체 회로 부품 판매점
SILICON BRIDGE RECTIFIERS
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 EIC discrete Semiconductors |
BR1500W - BR1510W
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 15 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
BR50W
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 7.5 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
BR
1500W
50
35
50
BR
1501W
100
70
100
BR
1502W
200
140
200
BR
1504W
400
280
400
15
BR
1506W
600
420
600
BR
1508W
800
560
800
BR
1510W
1000
UNIT
Volts
700 Volts
1000 Volts
Amps.
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
375
1.1
10
200
1.9
- 40 to + 150
- 40 to + 150
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR1500W - BR1510W )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
18
HEAT-SINK MOUNTING, Tc
5" x 4" x 3" THK.
15 (12.7cm x 12.7cm x 7.3cm)
Al.-Finned plate
12
9
6
3
0 0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
12
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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제조업체: EIC discrete Semiconductors
( eic )
BR1506W rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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