BR1500 반도체 회로 부품 판매점
SILICON BRIDGE RECTIFIERS
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 EIC discrete Semiconductors |
BR1500 - BR1510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 15 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 7.5 Amp.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL BR1500 BR1501 BR1502 BR1504 BR1506 BR1508 BR1510 UNITS
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
15 Amps.
IFSM
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
300
375
1.1
10
200
1.9
- 40 to + 150
- 40 to + 150
Amps.
A2S
Volts
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 4" x 3" (12.7cm.x 10.2cm.x 7.3cm.) Al.-Finned Plate
UPDATE : APRIL 23, 1998
RATING AND CHARACTERISTIC CURVES ( BR1500 - BR1510 )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
18
HEAT-SINK MOUNTING, Tc
5" x 4" x 3" THK.
15 (12.7cm x 12.7cm x 7.3cm)
Al.-Finned plate
12
9
6
3
0
0 25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
300
250
200 TJ = 50 °C
150
100
50 8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
0
1
2
4 6 10 20 40 60 100
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
0.1
0.01
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
10
TJ = 100 °C
1.0
0.1 TJ = 25 °C
0.01
0
20 40 60 80 100 120 140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
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제조업체: EIC discrete Semiconductors
( eic )
BR1500 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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