BYW80PI-200 반도체 회로 부품 판매점
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
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 STMicroelectronics |
® BYW80PI-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED PACKAGE :
Insulating voltage = 2500 VRMS
Capacitance = 7 pF
A
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in Isolated TO220AC, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
IF(RMS)
IF(AV)
IFSM
Parameter
RMS forward current
Average forward current
δ = 0.5
Surge non repetitive forward current
Tstg Storage and junction temperature range
Tj
isolated
TO220AC
(Plastic)
BYW80PI-200
Tc=110°C
tp=10ms
sinusoidal
Value
20
10
100
- 65 to + 150
- 65 to + 150
Unit
A
A
A
°C
°C
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
Value
200
Unit
V
October 1999 Ed : 2C
1/5
BYW80PI-200
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
IR * Tj = 25°C
VR = VRRM
VF **
Tj = 100°C
Tj = 125°C
IF = 7 A
Tj = 125°C
IF = 15 A
Tj = 25°C
IF = 15 A
Pulse test : * tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.027 x IF2(RMS)
Value
3.5
Unit
°C/W
Min. Typ. Max. Unit
10 µA
1 mA
0.85 V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
tfr Tj = 25°C
VFP Tj = 25°C
Test Conditions
IF = 0.5A
IR = 1A
IF = 1A
VR = 30V
IF = 1A
VFR = 1.1 x VF
IF = 1A
Irr = 0.25A
dIF/dt = -50A/µs
tr = 10 ns
tr = 10 ns
Min. Typ. Max. Unit
25 ns
35
15 ns
2V
2/5
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( stm )
BYW80PI-200 rectifier
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국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
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