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BYW29F-200 반도체 회로 부품 판매점

HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES



STMicroelectronics 로고
STMicroelectronics
BYW29F-200 데이터시트, 핀배열, 회로
® BYW29(F)
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION (ISOWATT220AC) :
Insulating voltage = 2000 V DC
Capacitance = 12 pF
A
K
A
K
DESCRIPTION
Single chip rectifier suited for switchmode power
supply and high frequency DC to DC converters.
Packaged in TO-220AC or ISOWATT220AC this
device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection applications.
ABSOLUTE MAXIMUM RATINGS
TO-220AC
(Plastic)
BYW29-200
isolated
ISOWATT220AC
(Plastic)
BYW29F-200
Symbol
IF(RMS)
IF(AV)
IFSM
Tstg
Tj
Parameter
RMS forward current
Average forward current TO-220AC
δ = 0.5
ISOWATT220AC
Surge non repetitive forward current
Storage and junction temperature range
Tc=120°C
Tc=100°C
tp=10ms
sinusoidal
Value
16
8
8
80
- 65 to + 150
- 65 to + 150
Unit
A
A
A
°C
°C
Symbol
VRRM
Parameter
Repetitive peak reverse voltage
Value
200
Unit
V
October 1999 - Ed: 2D
1/6

BYW29F-200 데이터시트, 핀배열, 회로
BYW29(F)
THERMAL RESISTANCE
Symbol
Rth (j-c)
Junction to case
Parameter
TO-220AC
ISOWATT220AC
Value
2.8
5.0
Unit
°C/W
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
Test Conditions
IR * Tj = 25°C
VR = VRRM
VF **
Tj = 100°C
Tj = 125°C
IF = 5 A
Tj = 125°C
IF = 10 A
Tj = 25°C
IF = 10 A
Pulse test :* tp = 5 ms, duty cycle < 2 %
** tp = 380 µs, duty cycle < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.040 x IF2(RMS)
Min. Typ. Max. Unit
10 µA
0.6 mA
0.85 V
1.05
1.15
RECOVERY CHARACTERISTICS
Symbol
Test Conditions
Min. Typ. Max. Unit
trr Tj = 25°C
IF = 0.5A
IR = 1A
Irr = 0.25A
25 ns
IF = 1A
VR = 30V
dIF/dt = -50A/µs
35
tfr Tj = 25°C
IF = 1A
VFR = 1.1 x VF
tr = 10 ns
15 ns
VFP Tj = 25°C
IF = 1A
tr = 10 ns
2V
2/6



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BYW29F-200 rectifier

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