BYW29-150 반도체 회로 부품 판매점
Rectifier diodes ultrafast
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 NXP Semiconductors |
Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYW29 series
GENERAL DESCRIPTION
Glass passivated high efficiency
rectifier diodes in a plastic envelope,
featuring low forward voltage drop,
ultra-fast recovery times and soft
recovery characteristic. They are
intended for use in switched mode
power supplies and high frequency
circuits in general where low
conduction and switching losses are
essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VRRM
VF
IF(AV)
trr
BYW29-
Repetitive peak reverse
voltage
Forward voltage
Forward current
Reverse recovery time
MAX.
100
100
0.895
8
25
MAX.
150
150
0.895
8
25
MAX.
200
200
0.895
8
25
UNIT
V
V
A
ns
PINNING - TO220AC
PIN DESCRIPTION
1 cathode (k)
2 anode (a)
tab cathode (k)
PIN CONFIGURATION
tab
SYMBOL
a
k
12
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IF(AV)
IF(RMS)
IFRM
IFSM
I2t
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Average forward current1
RMS forward current
Repetitive peak forward current
Non-repetitive peak forward
current
I2t for fusing
Storage temperature
Operating junction temperature
square wave; δ = 0.5;
Tmb ≤ 128 ˚C
sinusoidal; a = 1.57;
Tmb ≤ 130 ˚C
t = 25 µs; δ = 0.5;
Tmb ≤ 128 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
t = 10 ms
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
8
7.3
11.3
16
80
88
32
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A2s
˚C
˚C
1 Neglecting switching and reverse current losses
October 1994
1
Rev 1.100
Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYW29 series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
in free air
MIN. TYP. MAX. UNIT
- - 2.7 K/W
- 60 - K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
VF Forward voltage
IR Reverse current
CONDITIONS
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM; Tj = 100 ˚C
VR = VRWM
MIN.
-
-
-
-
-
TYP.
0.80
0.92
1.1
0.3
2
MAX.
0.895
1.05
1.3
0.6
10
UNIT
V
V
V
mA
µA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
Qs Reverse recovery charge
trr Reverse recovery time
Irrm Peak reverse recovery current
Vfr Forward recovery voltage
CONDITIONS
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs
IF = 1 A; VR ≥ 30 V;
-dIF/dt = 100 A/µs
IF = 10 A; VR ≥ 30 V; Tj = 100 ˚C;
-dIF/dt = 50 A/µs
IF = 1 A; dIF/dt = 10 A/µs
MIN.
-
-
-
-
TYP.
4
20
1
1
MAX. UNIT
11 nC
25 ns
2A
-V
October 1994
2
Rev 1.100
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BYW29-150 rectifier
데이터시트 다운로드 :
[ BYW29-150.PDF ]
[ BYW29-150 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
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