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BYT53C 반도체 회로 부품 판매점

Very Fast Silicon Mesa Rectifiers



Vishay Telefunken 로고
Vishay Telefunken
BYT53C 데이터시트, 핀배열, 회로
Very Fast Silicon Mesa Rectifiers
Features
D Glass passivated junction
D Hermetically sealed package
D Low reverse current
D Soft recovery characteristics
BYT53.
Vishay Telefunken
Applications
Very fast rectifiers and switches
Switched mode power supplies
High–frequency inverter circuits
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
=Repetitive peak reverse voltage
Test Conditions
Peak forward surge current
Average forward current
Junction and storage temperature range
tp=10ms,
half sinewave
l=10mm, TL=25°C
Type
BYT53A
BYT53B
BYT53C
BYT53D
BYT53F
BYT53G
Symbol
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
VR=VRRM
IFSM
Value
50
100
150
200
300
400
50
Unit
V
V
V
V
V
V
A
IFAV 1.9 A
Tj=Tstg –65...+175 °C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=10mm, TL=constant
on PC board with spacing 25mm
Symbol
RthJA
RthJA
Value
45
100
Unit
K/W
K/W
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Reverse recovery time
Test Conditions
IF=1A
IF=1A, Tj=175°C
VR=VRRM
VR=VRRM, Tj=150°C
IF=0.5A, IR=1A, iR=0.25A
Type
Symbol Min Typ Max Unit
VF 1.1 V
VF 0.9 V
IR 5 mA
IR 200 mA
trr 50 ns
Document Number 86030
Rev. 4, 24-Jun-98
www.vishay.de FaxBack +1-408-970-5600
1 (4)


BYT53C 데이터시트, 핀배열, 회로
BYT53.
Vishay Telefunken
Characteristics (Tj = 25_C unless otherwise specified)
120
100
80
60
ll
40
20
0 TL=constant
0 5 10 15 20 25 30
94 9552
l – Lead Length ( mm )
Figure 1. Max. Thermal Resistance vs. Lead Length
2.0
VR = VR RM
half sinewave
1.6
RthJA=45K/W
1.2 l=10mm
0.8
0.4 RthJA=100K/W
PCB: d=25mm
0
0 20 40 60 80 100 120 140 160 180
15769
Tamb – Ambient Temperature ( °C )
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
240
220
200
180
160
140
120
100
80
60
40
20
0
25
VR = VRRM
RthJA=
BYT53G
45K/W
BYT53F
100K/W
BYT53D
160K/W
BYT53C
BYT53B
BYT53A
50 75 100 125 150 175
15770
Tj – Junction Temperature ( °C )
Figure 2. Max. Reverse Power Dissipation vs.
Junction Temperature
10
Tj = 175°C
1
0.1
Tj = 25°C
0.01
0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
15768
VF – Forward Voltage ( V )
Figure 5. Max. Forward Current vs. Forward Voltage
1000
VR = VRRM
100
30
Tj=25°C
24
18
10
1
25 50 75 100 125 150 175
15771
Tj – Junction Temperature ( °C )
Figure 3. Max. Reverse Current vs.
Junction Temperature
12
6
0
0.1 1
10 100
94 9456
VR – Reverse Voltage ( V )
Figure 6. Typ. Diode Capacitance vs. Reverse Voltage
www.vishay.de FaxBack +1-408-970-5600
2 (4)
Document Number 86030
Rev. 4, 24-Jun-98




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BYT53C rectifier

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