BYQ28E 반도체 회로 부품 판매점
Rectifier diodes ultrafast
|
|
 NXP Semiconductors |
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
Rev. 04 — 5 December 2007
Product data sheet
1. Product profile
1.1 General description
Ultrafast, dual common cathode, epitaxial rectifier diodes in a SOT78 (TO-220AB) and a
SOT428 (DPAK) plastic package.
1.2 Features
I Fast switching
I Soft recovery characteristic
I Reverse surge capability
I Low thermal resistance
I Low forward voltage drop
I High thermal cycling performance
1.3 Applications
I Output rectifiers in high-frequency switched-mode power supplies
1.4 Quick reference data
I VRRM ≤ 200 V
I VF ≤ 0.895 V
2. Pinning information
I IO(AV) ≤ 10 A
I trr = 10 ns (typ)
Table 1. Pinning
Pin Description
1 anode 1
2 cathode
3 anode 2
mb mounting base; cathode
Simplified outline
[1] mb
Symbol
mb
13
2
sym084
2
13
SOT428 (DPAK)
123
SOT78 (3-lead TO-220AB)
[1] It is not possible to connect to pin 2 of the SOT428 package.
NXP Semiconductors
BYQ28 series E and ED
Rectifier diodes ultrafast, rugged
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
BYQ28E-200
TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead
TO-220AB
BYQ28ED-200
DPAK
plastic single-ended surface-mounted package (DPAK); 3-leads (one lead
cropped)
Version
SOT78
SOT428
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VRRM
VRWM
VR
IO(AV)
IFRM
IFSM
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average output current
repetitive peak forward current
non-repetitive peak forward
current
square waveform; δ = 1.0
square waveform; δ = 0.5;
Tmb ≤ 119 °C; both diodes conducting
tp = 25 µs; square waveform; δ = 0.5;
Tmb ≤ 119 °C; per diode
t = 10 ms; sinusoidal waveform; per
diode
t = 8.3 ms; sinusoidal waveform; per
diode
IRM
IRSM
peak reverse recovery current
non-repetitive peak reverse
current
tp = 2 µs; δ = 0.001
tp = 100 µs
Tstg storage temperature
Tj junction temperature
Electrostatic discharge
VESD
electrostatic discharge voltage all pins; human body model;
C = 250 pF; R = 1.5 kΩ
Min Max Unit
- 200 V
- 200 V
- 200 V
- 10 A
- 10 A
- 50 A
- 55 A
- 0.2 A
- 0.2 A
−40
+150
°C
- 150 °C
- 8 kV
BYQ28_SER_E_ED_4
Product data sheet
Rev. 04 — 5 December 2007
© NXP B.V. 2007. All rights reserved.
2 of 10
|
PDF 파일 내의 페이지 : 총 10 페이지
제조업체: NXP Semiconductors
( nxp )
BYQ28E rectifier
데이터시트 다운로드 :
[ BYQ28E.PDF ]
[ BYQ28E 다른 제조사 검색 ]
국내 전력반도체 판매점
상호 : 아이지 인터내셔날
전화번호 : 051-319-2877
[ 홈페이지 ]
IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈
( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )
전력반도체 문의 : 010-3582-2743
관련 데이터시트
BYQ28
Rectifier diodes ultrafast - NXP Semiconductors
BYQ28-100
Rectifier diodes ultrafast - NXP Semiconductors
BYQ28-150
Rectifier diodes ultrafast - NXP Semiconductors
BYQ28-200
Rectifier diodes ultrafast - NXP Semiconductors
BYQ28E
Rectifier diodes ultrafast - NXP Semiconductors
BYQ28E
Dual Common Cathode Ultrafast Rectifier - Vishay Siliconix
BYQ28E-100
Dual Common Cathode Ultrafast Rectifier - Vishay Telefunken
BYQ28E-150
Rectifier diodes ultrafast/ rugged - NXP Semiconductors
BYQ28E-150
Dual Common Cathode Ultrafast Rectifier - Vishay Telefunken