파트넘버.co.kr MUR1220CT 데이터시트 PDF


MUR1220CT 반도체 회로 부품 판매점

ULTRAFAST RECOVERY RECTIFIERS



LINGXUN 로고
LINGXUN
MUR1220CT 데이터시트, 핀배열, 회로
MUR1220CT/FCT/CS
ULTRAFAST RECOVERY RECTIFIERS
VOLTAGE 200 Volt CURRENT
12 Ampere
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Low power loss, high efficiency.
• High current capability
• For use in low voltage, high frequency inverters
free wheeling, and polarlity protection applications.
• Lead free in compliance with EU RoHS 2011/65/EU directive
MECHANICAL DATA
Device Weight : 0.07 ounces (1.96grams) - TO -220AB
0.06 ounces (1.74grams) - ITO - 220AB
0.01 ounces ( 0 3 grams) - TO- 2 5 2
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
Mounting Torque : Recommended 4~5 kg-cm.
2
13
MUR1220CT
TO-220AB
2
13
MUR1220CS
TO-252
MARK: BAXXX
2
13
MUR1220FCT
ITO-220AB
MAXIMUM RATINGS(TA=25oC unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load
Typical junction capacitance (VR=4V, f=1MHz)
per diode
per device
per diode
Typical thermal resistance per diode
Maximum Reverse Recovery Time (Note 2)
(Note 1)
SYMBOL
VRRM
I F(AV)
I FSM
CJ
RΘJC
Trr
Operating junction temperature range
TJ
Storage temperature range
TSTG
Note : 1. Mounted on infinite heatsink.
ELECTRICAL CHARACTERISTICS(TA=25oC unless otherwise noted)
VALUE
200
6
12
100
100
2.0
35
-40 to + 150
-40 to + 150
UNIT
V
A
A
pF
oC/W
ns
oC
oC
PARAMETER
Breakdown voltage per diode
SYMBOL TEST CONDITIONS
VBR I R=0.1mA
Instantaneous forward voltage per diode
VF I F=6A
TJ=25oC
Reverse current per diode
IR VR=200V TJ=25oC
MIN.
200
-
-
TYP.
-
-
-
MAX.
-
UNIT
V
0.975
V
1 uA
REV.F1.1
http://www.dglxdz.com
PAGE . 1


MUR1220CT 데이터시트, 핀배열, 회로
MUR1220CT/FCT/CS
RATING AND CHARACTERISTIC CURVES
12
10
7
5
2
60 Hz Resistive or
Inductive load
0
0 50
100
150
CASE TEMPERATURE, oC
FIG.1 - FORWARD CURRENT DERATING CURVE
10
6
TJ=25oC
PULSE WIDTH=300uS
1% DUTY CYCLE
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
TJ = 25oC
f = 1.0 MHZ
Vsig = 50mVp-p
100
100
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
80
60
40
20
0
1
10
NUMBER OF CYCLES AT 60Hz
100
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
1000
100
TJ=125oC
10
TJ=25oC
1
0.1
0
20 40 60 80 100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
10
0.1
1.0 4.0 10
REVERSE VOLTAGE, VOLTS
100
FIG.5 - TYPICAL JUNCTION CAPACITANCE
REV.F1.1
http://www.dglxdz.com
PAGE . 2




PDF 파일 내의 페이지 : 총 3 페이지

제조업체: LINGXUN

( lingxun )

MUR1220CT rectifier

데이터시트 다운로드
:

[ MUR1220CT.PDF ]

[ MUR1220CT 다른 제조사 검색 ]




국내 전력반도체 판매점


상호 : 아이지 인터내셔날

전화번호 : 051-319-2877

[ 홈페이지 ]

IGBT, TR 모듈, SCR, 다이오드모듈, 각종 전력 휴즈

( IYXS, Powerex, Toshiba, Fuji, Bussmann, Eaton )

전력반도체 문의 : 010-3582-2743



일반적인 전자부품 판매점


디바이스마트

IC114

엘레파츠

ICbanQ

Mouser Electronics

DigiKey Electronics

Element14


관련 데이터시트


MUR1220CS

ULTRAFAST RECOVERY RECTIFIERS - LINGXUN



MUR1220CT

Fast recovery diode - Xinshun



MUR1220CT

12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers - Thinki Semiconductor



MUR1220CT

Ultrafast Recovery Diode - BLUE ROCKET ELECTRONICS



MUR1220CT

ULTRAFAST RECOVERY RECTIFIERS - LINGXUN



MUR1220CTD

12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers - Thinki Semiconductor



MUR1220CTR

Super Fast Recovery Power Rectifier - Hi-Semicon



MUR1220CTR

12.0 Ampere Heatsink Dual Common Anode Fast Recovery Rectifiers - Thinki Semiconductor